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| 型号： | NTD80N02G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 24V 80A DPAK |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.8 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2600pF @ 20V |
| 功率 - 最大： | 75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 管件 |
NTD80N02
Power MOSFET
24 V, 80 A, N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
http://onsemi.com
? These Devices are Pb ? Free and are RoHS Compliant
Typical Applications
?
Power Supplies
?
Converters
?
Power Motor Controls
?
Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
24 V
G
R DS(on) TYP
5.0 m W
N ? Channel
D
I D MAX
80 A
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
24
Unit
Vdc
S
Gate ? to ? Source Voltage ? Continuous
Drain Current ? Continuous @ T C = 25 ° C
Drain Current ? Single Pulse (t p = 10 m s)
V GS
I D
I DM
± 20
80*
200
Vdc
Adc
4
4
4
12
Total Power Dissipation @ T C = 25 ° C
Operating and Storage
Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 24 Vdc, V GS = 10 Vdc,
I L = 17 Apk, L = 5.0 mH, R G = 25 Ω )
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
P D
T J , T stg
E AS
R θ JC
R θ JA
R θ JA
T L
75
? 55 to
150
733
1.65
67
120
260
Watts
° C
mJ
° C/W
° C
1 2 1 2
3 3
3
CASE 369AA CASE 369C CASE 369D
DPAK DPAK DPAK
(Surface Mount) (Surface Mount) (Straight Lead)
STYLE 2 STYLE 2 STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 ″ pad size,
(Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in 2 ).
*Chip current capability limited by package.
1
Gate
4
Drain
2
Drain
3
Source
1
Gate
2
Drain
3
Source
80N02
Y
WW
G
= Device Code
= Year
= Work Week
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
October, 2010 ? Rev. 5
1
Publication Order Number:
NTD80N02/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD80N02T4 | 功能描述:MOSFET 24V 80A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD80N02T4G | 功能描述:MOSFET NFET DPAK 24V 80A 60mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD85N02R | 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD85N02R-001 | 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD85N02R-1G | 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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