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| 型号： | NTD95N02R-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 24V 12A IPAK |
| 产品变化通告： | Product Discontinuation 09/Jan/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2400pF @ 20V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD95N02R
Power MOSFET
95 Amps, 24 Volts
N?Channel DPAK
Features
? High Power and Current Handling Capability
? Fast Switching Performance
? Low R DS(on) to Minimize Conduction Loss
? Low Gate Charge to Minimize Switching Losses
? Pb?Free Packages are Available
http://onsemi.com
V (BR)DSS R DS(ON) TYP I D MAX*
4.5 m W @ 10 V
24 V 95 A
5.9 m W @ 4.5 V
*I D MAX in the product summary table is continuous
and steady at 25 ° C.
Applications
? CPU Motherboard Vcore Applications
? High Frequency DC?DC Converters
? Motor Drives
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
G
D
S
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
24
± 20
Unit
V
V
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Thermal Resistance, Junction?to?Case
Total Power Dissipation @ T A = 25 ° C
Drain Current –
? Continuous @ T A = 25 ° C, Limited by Package
? Continuous @ T A = 25 ° C, Limited by Wires
Thermal Resistance, Junction?to? Ambient
(Note 1)
? Total Power Dissipation @ T A = 25 ° C
? Drain Current ? Continuous @ T A = 25 ° C
R q JC
P D
I D
I D
R q JA
P D
I D
1.45
86
95
32
52
2.4
15.8
° C/W
W
A
A
° C/W
W
A
1 2
3
4
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1
Gate
Drain
2
Drain
3
Source
Thermal Resistance, Junction?to?Ambient
(Note 2)
? Total Power Dissipation @ T A = 25 ° C
? Drain Current ? Continuous @ T A = 25 ° C
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
R q JA
P D
I D
T J ,
T STG
I S
100
1.25
12
?55 to
150
45
° C/W
W
A
° C
A
4
DPAK
CASE 369D
(Straight Lead)
4
Drain
Single Pulse Drain?to?Source Avalanche
Energy – (V DD = 25 V, V G = 10, I PK = 13 A,
L = 1 mH, R G = 25 W )
E AS
84
mJ
1
2
3
STYLE 2
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 seconds)
T L
260
° C
1 2 3
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
Y
WW
T95N02R
G
= Year
= Work Week
= Device Code
= Pb?Free Package
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
July, 2006 ? Rev. 3
1
Publication Order Number:
NTD95N02R/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD95N02RG | 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD95N02RT4 | 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD95N02RT4G | 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD985 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-126VAR |
| NTD986 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 2A I(C) | TO-126VAR |
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