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参数资料
| 型号： | NTE107 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor UHF Oscillator for Tuner |
| 中文描述： | 硅NPN晶体管超高频振荡器调谐器 |
| 文件页数： | 1/2页 |
| 文件大小： | 21K |
| 代理商： | NTE107 |
NTE107
Silicon NPN Transistor
UHF Oscillator for Tuner
Description:
The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically
for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
°
C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (During Soldering, 1/16”
±
1/32” from case, 10sec), T
L
30V
12V
3V
25mA
200mW
2.67mW/
°
C
+100
°
C
–55
°
to +125
°
C
+260
°
C
. . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Static Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
CEO
= 3mA, Note 1
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Forward Current Transfer Ratio
Collector Saturation Voltage
Symbol
Test Conditions
Min
Typ
Max Unit
V
(BR)CBO
I
C
= 100
μ
A
30
12
3
–
–
20
–
–
–
–
–
–
–
–
–
V
V
V
μ
A
μ
A
V
(BR)EBO
I
E
= 100
μ
A
I
CBO
V
CB
= 15V, I
E
= 0
I
EBO
V
EB
= 2V, I
C
= 0
h
FE
V
CE
= 10V, I
C
= 8mA
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
0.5
0.5
–
0.6
75
–
V
Note 1. Pulse test: Pulse Width = 1
μ
s, Duty Cycle = 1%.
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| NTE108 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 30V 0.05A TO-92 RF/IF AMP 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:RF TRANSISTOR NPN 15V 600MHZ TO-92 制造商:NTE Electronics 功能描述:RF TRANSISTOR, NPN 15V 600MHZ TO-92 制造商:NTE Electronics 功能描述:T-NPN- SI-RF/IF/VID AMP 制造商:NTE Electronics 功能描述:TO-92 NPN RF/IF AMP 制造商:NTE Electronics 功能描述:RF TRANSISTOR, NPN 15V 600MHZ TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:600MHz; Power Dissipation Pd:625mW; DC Collector Current:50mA; DC Current Gain hFE:20; No. of Pins:3 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 15V 0.05A 3-Pin TO-92 |
| NTE1080 | 制造商:NTE Electronics 功能描述: |
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