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参数资料
| 型号： | NTE108 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Frequency Amplifier |
| 中文描述： | 硅NPN晶体管高频放大器 |
| 文件页数： | 2/2页 |
| 文件大小： | 22K |
| 代理商： | NTE108 |
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
h
FE
I
C
= 3mA, V
CE
= 1V, Note 2
I
C
= 8mA, V
CE
= 10V, Note 2
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
20
20
–
–
–
–
–
–
–
200
0.4
1.0
Collector
–
Emitter Saturation Voltage
Base
–
Emitter Saturation Voltage
Small–Signal Characteristics
Current Gain
–
Bandwidth Product
V
CE(sat)
V
BE(sat)
V
V
f
T
I
C
= 4mA, V
CE
= 10V,
f = 100MHz, Note 2
V
CB
= 0V, I
E
= 0, f = 140kHz
V
CB
= 10V, I
E
= 0, f = 140kHz
V
EB
= 0.5V, I
C
= 0, f = 140kHz
I
C
= 1mA, V
CE
= 6V,
R
S
= 400
, f = 60MHz
600
–
–
MHz
Output Capacitance
C
obo
–
–
–
–
–
–
–
–
3.0
1.7
2.0
6
pF
pF
pF
dB
Input Capacitance
Noise Figure
C
ibo
NF
Functional Test
Common
–
Emitter Amplifier Power
Gain
Power Output
G
pe
I
C
= 6mA, V
CB
= 12V,
f = 200MHz (G
fd
+ G
re
<
–
20dB)
I
C
= 8mA, V
CB
= 15V,
f = 500MHz
I
C
= 8mA, V
CB
= 15V,
P
out
= 30mW, f = 500MHz
15
–
–
dB
P
out
30
–
–
mW
Oscillator Collector Efficiency
η
25
–
–
%
Note 2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 1%.
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
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