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参数资料
| 型号： | NTE11 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Current Amplifier |
| 中文描述： | 硅晶体管互补大电流放大器 |
| 文件页数： | 2/2页 |
| 文件大小： | 22K |
| 代理商： | NTE11 |
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Emitter Cutoff Current
NTE11
NTE12
Collector
–
Emitter Voltage
NTE11
NTE12
Emitter
–
Base Voltage
V
EBO
DC Current Gain
NTE11
NTE12
NTE11 Only
h
FE2
Collector
–
Emitter Saturation Voltage
NTE11
NTE12
Transition Frequency
NTE11
NTE12
Collector Output Capacitance
NTE11
NTE12
Test Conditions
Min
Typ
Max Unit
I
EBO
V
EB
= 7V, I
C
= 0
V
EB
= 5V, I
C
= 0
–
–
–
–
0.1
1.0
μ
A
μ
A
V
CEO
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
20
18
7
–
–
–
–
–
–
V
V
V
h
FE1
V
CE
= 2V, I
C
= 500mA, Note 1
V
CE
= 2V, I
C
= 2A, Note 1
V
CE
= 2V, I
C
= 2A, Note 1
340
180
150
–
–
–
600
625
–
V
CE(sat)
I
C
= 3A, I
B
= 100mA, Note 1
I
C
= 3A, I
B
= 100mA, Note 1
–
–
–
1
V
V
0.4
1.0
f
T
V
CB
= 6V, I
E
= 50mA, f = 200MHz
V
CB
= 6V, I
E
= 50mA, f = 200MHz
–
–
150
120
–
–
MHz
MHz
C
ob
V
CB
= 20V, I
E
= 0, f = 1MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
–
–
–
50
–
pF
pF
60
Note 1. Pulse measurement
.021 (.445) Dia Max
E C B
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
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