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参数资料
| 型号： | NTE123AP |
| 厂商： | NTE Electronics, Inc. |
| 元件分类： | 音频放大器 |
| 英文描述： | Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159) |
| 中文描述： | 硅NPN晶体管音频放大器，开关（并发症的NTE159） |
| 文件页数： | 2/3页 |
| 文件大小： | 26K |
| 代理商： | NTE123AP |
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
(Note 1)
DC Current Gain
h
FE
I
C
= 0.1mA, V
CE
= 10V
I
C
= 1mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
=
–
55
°
C
I
C
= 150mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 10V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
35
–
–
50
–
–
75
–
–
35
–
–
100
–
300
50
–
–
40
–
–
Collector
–
Emitter Saturation Voltage
V
CE(sat)
–
–
0.3
V
–
–
1.0
V
Base
–
Emitter Saturation Voltage
V
BE(sat)
0.6
–
1.2
V
–
–
2.0
V
Small–Signal Characteristics
Current Gain
–
Bandwidth Product
f
T
I
C
= 20mA, V
CE
= 20V,
f = 100MHz, Note 2
V
CB
= 10V, I
E
= 0, f = 100kHz
V
EB
= 0.5V, I
C
= 0, f = 100kHz
I
C
= 1mA, V
CE
= 10V, f = 1kHz
I
C
= 10mA, V
CE
= 10V, f = 1kHz
I
C
= 1mA, V
CE
= 10V, f = 1kHz
I
C
= 10mA, V
CE
= 10V, f = 1kHz
I
C
= 1mA, V
CE
= 10V, f = 1kHz
I
C
= 10mA, V
CE
= 10V, f = 1kHz
I
C
= 1mA, V
CE
= 10V, f = 1kHz
I
C
= 10mA, V
CE
= 10V, f = 1kHz
I
E
= 20mA, V
CB
= 20V, f = 31.8MHz
I
C
= 100
μ
A, V
CE
= 10V,
R
S
= 1k
, f = 1kHz
I
C
= 20mA, V
CE
= 20V, f = 300MHz
300
–
–
MHz
Output Capacitance
C
obo
C
ibo
h
ie
–
–
8
pF
Input Capacitance
–
–
25
pF
Input Impedance
2.0
–
8.0
k
k
0.25
–
1.25
Voltage Feedback Ratio
h
re
–
–
8
x 10
–
4
x 10
–
4
–
–
4
Small
–
Signal Current Gain
h
fe
50
–
300
75
–
375
Output Admittance
h
oe
5.0
–
35
μ
mhos
μ
mhos
ps
25
–
200
Collector
–
Base Time Constant
rb
′
C
c
NF
–
–
150
Noise Figure
–
–
4
dB
Real Part of Common
–
Emitter
High Frequency Input Impedance
Re(h
ie
)
–
–
60
Switching Characteristics
Delay Time
t
q
t
r
t
s
t
f
T
A
V
CC
= 30V, V
BE(off)
= 0.5V,
I
C
= 150mA, I
B1
= 15mA
–
–
10
ns
Rise Time
–
–
25
ns
Storage Time
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
–
–
225
ns
Fall Time
–
–
60
ns
Active Region Time Constant
I
C
= 150mA, V
CE
= 30V
–
–
2.5
ns
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
Note 2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE123AP | 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 40V TO-92 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 40V, TO-92 |
| NTE123AP-10 | 制造商:NTE Electronics 功能描述:Transistor; TO92; NPN; 40; 60; 6 V; 600 mA; 1 W @ 25 degC; -55 to 150 degC; 357 制造商:NTE Electronics 功能描述:NTE123AP (10/PKG) |
| NTE123AP-10-LF | 制造商:NTE Electronics 功能描述:NTE123AP (10/PKG) |
| NTE123AP-5 | 制造商:NTE Electronics 功能描述:Transistor; TO92; NPN; 40; 60; 6 V; 600 mA; 1 W @ 25 degC; -55 to 150 degC; 357 制造商:NTE Electronics 功能描述:NTE123AP (5/PKG) |
| NTE123AP-5-LF | 制造商:NTE Electronics 功能描述:NTE123AP (5/PKG) |
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