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参数资料
| 型号： | NTE128 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors Audio Output, Video, Driver |
| 中文描述： | 硅晶体管互补音频输出，视频，驱动程序 |
| 文件页数： | 2/3页 |
| 文件大小： | 27K |
| 代理商： | NTE128 |
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector
–
Emitter Breakdown Voltage
NTE128
V
(BR)CEO
I
C
= 30mA, I
B
= 0
I
C
= 10mA
80
–
–
V
NTE129
80
–
–
V
Collector
–
Base Breakdown Voltage
NTE128
V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
I
C
= 10
μ
A
140
–
–
V
NTE129
80
–
–
V
Emitter
–
Base Breakdown Voltage
NTE128
V
(BR)EBO
I
E
= 100
μ
A, I
C
= 0
I
E
= 10
μ
A
7
–
–
V
NTE129
5
–
–
V
Collector Cutoff Current
NTE128
I
CBO
V
CB
= 90V, I
E
= 0
V
CB
= 90V, I
E
= 0, T
A
= +150
°
C
V
CB
= 60V
V
CB
= 60V, T
A
= +150
°
C
–
–
0.01
μ
A
μ
A
nA
μ
A
–
–
10
NTE129
–
–
50
–
–
50
Emitter Cutoff Current
NTE128
I
EBO
V
BE
= 5V, I
C
= 0
V
BE
= 5V
–
–
0.010
μ
A
μ
A
NTE129
–
–
10
ON Characteristics
(Note 2)
DC Current Gain
NTE128
h
FE
I
C
= 0.1mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V, T
C
=
–
55
°
C
I
C
= 500mA, V
CE
= 10V
I
C
= 1.0A, V
CE
= 10V
I
C
= 100
μ
A, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V, T
C
=
–
55
°
C
I
C
= 500mA, V
CE
= 5V
I
C
= 1.0A, V
CE
= 5V
50
–
–
90
–
–
100
–
300
40
–
–
50
–
–
15
–
–
NTE129
75
–
–
100
–
300
40
–
–
70
–
–
25
–
–
Collector
–
Emitter Saturation Voltage
NTE128
V
CE(sat)
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
–
–
0.2
V
–
–
0.5
V
NTE129
–
–
0.15
V
–
–
0.5
V
Base
–
Emitter Saturation Voltage
NTE128
V
BE(sat)
I
C
= 150mA, I
B
= 15mA
–
–
1.1
V
NTE129
–
–
0.9
V
Base
–
Emitter ON Voltage (NTE129 Only)
V
BE(on)
I
C
= 500mA, V
CE
= 500mV
–
–
1.1
V
Note 2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1%.
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