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参数资料
| 型号： | NTE128P |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors General Purpose Amp |
| 中文描述： | 硅晶体管互补通用放大器 |
| 文件页数： | 1/2页 |
| 文件大小： | 20K |
| 代理商： | NTE128P |
NTE128P (NPN) & NTE129P (PNP)
Silicon Complementary Transistors
General Purpose Amp
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use
in general purpose power amplifier and switching applications.
Features:
High V
CE
Ratings
Exceptional Power Dissipation Capability
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current , I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
TOT
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V
80V
5V
1A
0.850W
2W
–55
°
to +150
°
C
–55
°
to +150
°
C
147
°
C/W
62.5
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
Test Conditions
I
C
= 10mA, I
B
= 0
V
CB
= 80V
V
EB
= 4V
I
C
= 10mA, V
CE
= 2V
I
C
= 350mA, V
CE
= 2V
V
CE(sat)
I
C
= 350mA
f
T
I
C
= 50mA
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
80
–
–
100
100
–
50
–
Typ
–
–
–
–
–
–
–
–
Max
–
100
100
–
300
0.35
–
15
Unit
V
nA
nA
Collector–Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
V
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE129 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 80V IC=1A TO-39 AUDIO OUTPUT VIDEO DRIVER 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR PNP -80V TO-39 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -80V TO-39 制造商:NTE Electronics 功能描述:T-PNP-SI AF OUTPUT 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -80V TO-39; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:7W; DC Collector Current:-1A; DC Current Gain hFE:300; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 80V 1A 3-Pin TO-39 |
| NTE1290 | 制造商:NTE Electronics 功能描述: |
| NTE1291 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
| NTE1292 | 制造商:NTE 制造商全称:NTE Electronics 功能描述:Integrated Circuit IF Amplifier and Detector |
| NTE1293 | 制造商:NTE Electronics 功能描述:IC-DUAL AF PWR AMP 制造商:NTE Electronics 功能描述:Audio Amp Speaker 2-CH Stereo 8.5W Class-AB 12-Pin(12+Tab) SIP |
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