参数资料
型号: NTE130
厂商: NTE Electronics, Inc.
英文描述: Silicon Power Transistor Audio Power Amp, Medium Speed Switch
中文描述: 硅功率晶体管音频功率放大器,中速开关
文件页数: 2/2页
文件大小: 24K
代理商: NTE130
Electrical Characteristics (Cont’d):
(T
C
=+25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
(Note 1)
DC Current Gain
h
FE
I
C
= 4A, V
CE
= 4V
I
C
= 10A, V
CE
= 4V
I
C
= 4A, I
B
= 400mA
I
C
= 10A, I
B
= 3.3A
I
C
= 4A, V
CE
= 4V
20
5
70
1.1
3.0
1.5
Collector
Emitter Saturation Voltage
V
CE(sat)
V
V
V
Base
Emitter ON Voltage
Second Breakdown
Second Breakdown Collector Current
with Base Forward Biased
Dynamic Characteristics
Current Gain
Bandwidth Product
Small
Signal Current Gain
Small
Signal Current Gain Cutoff
Frequency
V
BE(on)
I
s/b
V
CE
= 40V, t = 1.0s; Nonrepetitive
2.87
A
f
T
h
fe
f
hfe
I
C
= 500mA, V
CE
= 10V, f = 1MHz
I
C
= 1A, V
CE
= 4V, f = 1kHz
V
CE
= 4V, I
C
= 1A, f = 1kHz
2.5
15
10
MHz
120
kHz
Note 1. Pulse Test: Pulse Width
300
μ
s. Duty Cycle
2%.
Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and
NTE130 (NPN).
.135 (3.45) Max
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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