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参数资料
| 型号： | NTE13 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Low Voltage Output Amp |
| 中文描述： | 硅NPN晶体管低电压输出放大器 |
| 文件页数： | 1/2页 |
| 文件大小： | 20K |
| 代理商： | NTE13 |
NTE13
Silicon NPN Transistor
Low Voltage Output Amp
Features:
Low Collector–Emitter Saturation Voltage
High DC Current Gain
An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by
Taping and Magazine Packaging
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V
20V
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A
600mW
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
DC Current Gain
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
Test Conditions
V
CB
= 25V, I
C
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 500mA, Note 1
V
CE
= 2V, I
C
= 1A, Note 1
V
CE(sat)
I
C
= 500mA, I
B
= 20mA
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
f
T
V
CB
= 10V, –I
E
= 50mA
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
–
25
20
12
400
60
–
–
–
–
Typ
–
–
–
–
–
–
0.13
–
200
10
Max
100
–
–
–
800
–
0.4
1.2
–
–
Unit
nA
V
V
V
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transistion Frequency
Collector Capaciatnce
V
V
MHz
pF
Note 1. Pulse Test
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