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参数资料
| 型号： | NTE14 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon PNP Transistor High Power, Low Frequency Driver |
| 中文描述： | 硅PNP晶体管高功率，低频驱动器 |
| 文件页数： | 1/2页 |
| 文件大小： | 19K |
| 代理商： | NTE14 |
NTE14
Silicon PNP Transistor
High Power, Low Frequency Driver
Features:
High Power Compact FTR Package: P
C
= 750mW
High Breakdown Voltage: V
CEO
= 80V
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V
80V
5V
700mA
750mW
+135
°
C
–55
°
to +135
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 2mA
V
(BR)CBO
I
C
= 50
μ
A
V
(BR)EBO
I
E
= 50
μ
A
I
CBO
V
CB
= 50V
I
EBO
V
EB
= 4V
h
FE
V
CE
= 3V, I
C
= 100mA
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
f
T
V
CE
= 10V, I
E
= 50mA
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
80
–
–
V
Collector–Base Breakdown Voltage
80
–
–
V
Emitter–Base Breakdown Voltage
5
–
–
V
Collector Cutoff Current
–
–
0.5
μ
A
μ
A
Emitter Cutoff Current
–
–
0.5
DC Current Gain
120
–
270
–
Collector Saturation Voltage
–
0.2
0.4
V
Transition Frequency
–
100
–
MHz
Output Capacitance
–
14
20
pF
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