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参数资料
| 型号： | NTE154 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Voltage Video Output |
| 中文描述： | 硅NPN晶体管高电压视频输出 |
| 文件页数： | 2/2页 |
| 文件大小： | 23K |
| 代理商： | NTE154 |
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Base Breakdown Voltage
V
(BR)CBO
V
(BR)EBO
I
CBO
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
I
E
= 0, V
CB
= 200V
I
E
= 0, V
CB
= 200V, T
A
= +125
°
C
I
C
= 0, V
EB
= 6V
I
C
= 1mA, V
CE
= 20V
I
C
= 10mA, V
CE
= 20V, Note 5
I
C
= 30mA, V
CE
= 20V, Note 5
I
C
= 5mA, I
B
= 0, Note 2, Note 5
I
C
= 20mA, I
B
= 2mA, Note 5
I
C
= 20mA, I
B
= 2mA, Note 5
I
C
= 15mA, V
CE
= 150V, f = 20MHz
I
C
= 3mA, V
CE
= 270V, f = 20MHz
I
C
= 30mA, V
CE
= 30V, f = 20MHz,
R
L
= 9k
I
E
= 0, V
CB
= 20V
I
C
= 0, V
EB
= 500mV
300
–
–
V
Emitter Base Breakdown Voltage
7
–
–
V
Collector Cutoff Current
–
1.0
100
nA
μ
A
nA
–
0.2
5.0
Emitter Cutoff Current
I
EBO
h
FE
–
1.0
100
DC Current Gain
20
50
–
40
100
–
40
100
–
Collector Emitter Sustaining Voltage
V
CEO(sus)
V
BE(sat)
V
CE(sat)
h
fe
300
–
–
V
Base Emitter Saturating Voltage
–
0
.74
0.85
V
Collector Emitter Saturating Voltage
–
0.35
1.0
V
High Frequency Current Gain
2.5
4.0
–
2.0
2.5
–
2.0
4.0
–
Collector Base Capacitance
C
cb
C
eb
–
2.5
3.0
pF
Emitter Base Capacitance
–
45
70
pF
Note 2. This rating refers to a high current point where collector to emitter voltage is lowest.
Note 5. Pulse Conditions: Length = 300
μ
s, Duty Cycle = 1%.
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
45
°
.031 (.793)
Emitter
Base
Collector/Case
.018 (0.45)
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