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参数资料
| 型号： | NTE159 |
| 厂商： | NTE Electronics, Inc. |
| 元件分类： | 音频放大器 |
| 英文描述： | Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP) |
| 中文描述： | 硅PNP晶体管音频放大器，开关（并发症的NTE123AP） |
| 文件页数： | 2/3页 |
| 文件大小： | 24K |
| 代理商： | NTE159 |
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 500mA
I
C
= 150mA, I
B
= 15mA, Note 2
I
C
= 500mA, I
B
= 50mA, Note 2
I
C
= 150mA, I
B
= 15mA, Note 2
I
C
= 500mA, I
B
= 50mA, Note 2
I
C
= 500mA, V
CE
= 500mV
25
–
–
40
–
–
50
–
250
40
–
–
30
–
–
Collector
–
Emitter Saturation Voltage
V
CE(sat)
–
–
0.15
V
–
–
0.5
V
Base
–
Emitter Saturation Voltage
V
BE(sat)
–
–
0.9
V
–
–
1.1
V
Base
–
Emitter ON Voltage
V
BE(on)
–
–
1.1
V
Small–Signal Characteristics
Current Gain
–
Bandwidth Product
f
T
I
C
= 50mA, V
CE
= 10V, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 100kHz
V
CB
= 10V, I
E
= 0, f = 100kHz
I
C
= 10mA, V
CE
= 10V, f = 1kHz
I
C
= 10mA, V
CE
= 10V, f = 1kHz
I
C
= 10mA, V
CE
= 10V, f = 1kHz
I
C
= 10mA, V
CE
= 10V, f = 1kHz
I
C
= 100
μ
A, V
CE
= 10V, R
S
= 1k
,
f = 1kHz
100
–
500
MHz
Output Capacitance
C
ob
Ci
b
h
ie
h
re
h
fe
h
oe
NF
–
–
30
pF
Input Capacitance
–
–
110
pF
k
Input Impedance
–
550
–
Voltage Feedback Ratio
–
100
–
x 10
–
6
Small
–
Signal Current Gain
–
200
–
Output Admittance
–
100
–
μ
mhos
dB
Noise Figure
–
–
3
Switching Characteristics
Turn
–
On Time
t
on
V
CC
= 30V, V
BE(off)
= 3.8V,
I
C
= 500mA, I
B1
= 50mA
V
CC
= 30V, I
C
= 500mA,
I
B1
= I
B2
= 50mA
–
–
100
ns
Turn
–
Off Time
t
off
–
–
400
ns
Note 2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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