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参数资料
| 型号： | NTE165 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Dual Operational Amplifiers 8-SOIC 0 to 70 |
| 中文描述： | 硅NPN晶体管电视机产量的横向 |
| 文件页数： | 2/2页 |
| 文件大小： | 24K |
| 代理商： | NTE165 |
Electrical Characteristics (Cont’d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector
–
Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
f
T
I
C
= 4.5A, I
B
= 2A, Note 1
I
C
= 4.5A, I
B
= 2A, Note 1
V
CE
= 5V, I
C
= 100mA, f = 5MHz
–
–
1.0
V
Base
–
Emitter Saturation Voltage
–
–
1.3
V
Current Gain
–
Bandwidth Product
–
7
–
MHz
Switching Characteristics
(Inductive Load)
Storage Time
t
s
t
f
V
CC
= 140V, I
C
= 4.5A, h
FE
= 2.5,
L
C
= 0.9mH, L
B
= 3
H
μ
–
7.0
–
μ
s
μ
s
Fall Time
–
0.55
–
Note 1. Pulse test: Pulse Width = 300
μ
s, Duty Cycle
≤
1.5%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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