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参数资料
| 型号： | NTE181 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 23K |
| 代理商： | NTE181 |
NTE180 (PNP) & NTE181 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
Description:
The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case
designed for use as output devices in complementary audio amplifiers to 100 watts music power per
channel.
Features:
D High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A
D Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCER
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
90V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
7.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), PD
200W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
1.14W/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC
0.875
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CER IC = 200mA, RBE = 100, Note 1 100
–
V
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 200mA, Note 1
90
–
V
Collector–Base Cutoff Current
ICBO
VCB = 100V, IE = 0
–
1.0
mA
VCB = 100V, IE = 0, TC = +150°C
–
5.0
mA
Emitter–Base Cutoff Current
IEBO
VBE = 4V, IC = 0
–
1.0
mA
Note 1. Pulse Test: Pulse Width
≤ 300s. Duty Cycle ≤ 2%.
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