参数资料
型号: NTE3102
厂商: NTE Electronics, Inc.
英文描述: Photon Coupled Interrupter Module NPN Transistor
中文描述: 光子耦合遮断NPN晶体管模块
文件页数: 2/2页
文件大小: 20K
代理商: NTE3102
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Detector
Collector
Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)ECO
I
CEO
C
ce
I
C
= 1mA
I
E
= 100
μ
A
V
CE
= 45V
V
CE
= 5V, f = 1MHz
55
V
Emitter
Collector Breakdown Voltage
6
V
Collector Dark Current
100
nA
Capacitance
3.3
5.0
pF
Coupled
Photodiode Current
I
CE(on)
V
CE
= 5V, I
F
= 5mA
V
CE
= 5V, I
F
= 20mA
V
CE
= 5V, I
F
= 30mA
I
C
= 1.8mA, I
F
= 30mA
V
CC
= 5V, I
F
= 30mA, R
L
= 2.5k
0.15
mA
1.0
mA
1.9
mA
Collector
Emitter Saturation Voltage
V
CE(sat)
t
on
t
off
0.4
V
μ
s
μ
s
Turn
On Time
8
Turn
Off Time
50
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
.303 (7.69)
Min
.124 (3.15
.110 (2.79) Max
.295 (7.49) Max
.246 (6.25)
Seating
Plane
.136 (3.54) Min
Sensing Area
.433 (11.0)
Max
.315 (8.0) Min
E
D
+
+
D
Detector
E
Emitter
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