- 您现在的位置：买卖IC网 > PDF目录363693 > NTE316 (NTE Electronics, Inc.) Silicon NPN Transistor High Gain, Low Noise Amp PDF资料下载
参数资料
| 型号： | NTE316 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Gain, Low Noise Amp |
| 中文描述： | 硅NPN晶体管高增益，低噪声放大器 |
| 文件页数： | 1/2页 |
| 文件大小： | 21K |
| 代理商： | NTE316 |
NTE316
Silicon NPN Transistor
High Gain, Low Noise Amp
Features:
High Current Gain–Bandwidth Product
Low Noise Figure
High Power Gain
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Continuous Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
15V
30V
3V
50mA
200mW
1.14mW/
°
C
–65
°
to +200
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
C
= 5mA, I
B
= 0
I
C
= 0.1mA, I
E
= 0
I
E
= 0.1mA, I
C
= 0
V
CB
= 5V, I
E
= 0
15
–
–
V
Collector–Base Breakdown Voltage
30
–
–
V
Emitter–Base Breakdown Voltage
3.5
–
–
V
Collector Cutoff Current
–
–
10
nA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 2mA
25
–
250
Dynamic Characteristics
Current Gain–Bandwidth Product
f
T
V
CE
= 5V, I
C
= 10mA, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1kHz
V
CE
= 5V, I
C
= 2mA, f = 1kHz
V
CE
= 5V, I
E
= 2mA, f = 31.8MHz
V
CE
= 5V, I
C
= 2mA, R
S
= 50
,
f = 450MHz
1400
–
–
MHz
Collector–Base Capacitance
C
cb
h
fe
r
b
’C
c
NF
–
0.8
1.0
pF
Small–Signal Current Gain
25
–
250
Collector–Base Time Constant
2
–
12
ps
Noise Figure
–
–
4.5
dB
Functional Test
Common–Emitter Amplifier Power Gain
G
pe
V
CE
= 5V, I
C
= 2mA, f = 450MHz
15
–
–
dB
相关PDF资料 |
PDF描述 |
|---|---|
| NTE317 | Silicon NPN Transistor RF Power Output |
| NTE3183 | Discrete Blue LED Indicators |
| NTE3184 | Discrete Blue LED Indicators |
| NTE3186 | Discrete Blue LED Indicators |
| NTE3187 | Discrete Blue LED Indicators |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE3160 | 制造商:NTE Electronics 功能描述:LED Uni-Color Red 700nm 2-Pin |
| NTE3161 | 制造商:NTE Electronics 功能描述:LED GREEN RECTANGULAR 1MM X 5MM 制造商:NTE Electronics 功能描述:LED Uni-Color Green 565nm 2-Pin |
| NTE3166 | 制造商:NTE Electronics 功能描述:LED Uni-Color Red 700nm 2-Pin |
| NTE3167 | 制造商:NTE Electronics 功能描述:LED GREEN 2MM X 5MM RECTANGULAR |
| NTE3168 | 制造商:NTE Electronics 功能描述: |
发布紧急采购，3分钟左右您将得到回复。