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参数资料
| 型号： | NTE320F |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN RF Power Transistor 40W @ 175MHz |
| 中文描述： | 硅npn型射频功率晶体管功率40W @ 175MHz时 |
| 文件页数： | 2/3页 |
| 文件大小： | 27K |
| 代理商： | NTE320F |
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector
–
Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
I
CBO
I
C
= 100mA, I
B
= 0
I
C
= 20mA, V
BE
= 0
I
E
= 10mA, I
C
= 0
V
CE
= 15V, V
BE
= 0, T
C
= +55
°
C
V
CB
= 15V, I
E
= 0
18
–
–
V
36
–
–
V
Emitter
–
Base Breakdown Voltage
4
–
–
V
Collector Cutoff Current
–
–
10
mA
–
–
2.5
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 1A, V
CE
= 5V
5
–
–
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 15V, I
E
= 0, f = 0.1MHz
–
170
200
pF
Function Test
Common
–
Emitter Amplifier Power Gain
G
PE
η
P
O
= 40W, V
CC
= 12.5V, f = 175MHz
P
O
= 40W, V
CC
= 12.5V, f = 175MHz
4.5
–
–
dB
Collector Efficiency
70
–
–
%
175MHz Test Circuit
SHIELD
DUT
100
μ
F
0.1
μ
F
1000pF
RFC
L1
C1
RF
Input
C2
RFC
100pF
100pF
L2
C4
C3
RF
Output
+12.5Vdc
+
C1, C2, C3, C4
5.0
–
80pF ARCO 462
Straight Wire, #14 AWG, 1
–
3/8
”
Long
L2
1 Turn, #14 AWG, 3/8
”
ID, Length Plus Leads = 1.000
VK200
–
20/4B, FERROXCUBE
L1
RFC
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