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参数资料
| 型号： | NTE323 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors General Purpose |
| 中文描述： | 硅晶体管通用互补 |
| 文件页数： | 1/2页 |
| 文件大小： | 22K |
| 代理商： | NTE323 |
NTE323 (PNP) & NTE324 (NPN)
Silicon Complementary Transistors
General Purpose
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Absolute Maximum Ratings:
Collector–Base Voltage (I
E
= 0), V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage (I
C
= 0), V
EBO
Collector Current, I
C
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
tot
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
120V
120V
4V
1A
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W
1W
+200
°
C
–65
°
to +200
°
C
17.4
°
C/W
175
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
μ
A
mA
μ
A
V
Collector Cutoff Current
I
CBO
I
CEO
I
CEV
V
CB
= 120V, I
E
= 0
V
CE
= 80V, I
B
= 0
V
CE
= 120V, V
BE
= –1.5V
V
CE
= 120V, V
BE
= –1.5V, T
C
= +150
°
C
V
EB
= 4V, I
C
= 0
V
CEO(sus)
I
C
= 10mA, I
B
= 0, Note 1
V
CE(sat)
I
C
= 250mA, I
B
= 25mA, Note 1
I
C
= 500mA, I
B
= 50mA, Note 1
I
C
= 1A, I
B
= 200mA, Note 1
–
–
1
–
–
10
–
–
1
–
–
1
Emitter Cutoff Current
I
EBO
–
–
1
Collector–Emitter Sustaining Voltage
120
–
–
Collector–Emitter Saturation Voltage
–
–
0.6
V
–
–
1.0
V
–
–
2.0
V
Note 1. Pulse Duration = 300
μ
s, Duty Cycle
≤
2%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE324 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 120V IC=1.5A TO-39 CASE GENERAL PURPOSE AMP SWITCH COMP'L 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR NPN 120V TO-39 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 120V TO-39 制造商:NTE Electronics 功能描述:T-NPN- SI-AF PWR AMP 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 120V TO-39; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4V; Transition Frequency Typ ft:30MHz; Power Dissipation Pd:10W; DC Collector Current:1A; DC Current Gain hFE:40; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 120V 1A 3-Pin TO-39 |
| NTE325 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 40V IC=7.5A PO=50W RF POWER OUTPUT |
| NTE326 | 制造商:NTE Electronics 功能描述:JFET P-CHANNEL 40V TO-92 CASE GENERAL PURPOSE AF AMP 制造商:NTE Electronics 功能描述:GEN PURP AF AMP 制造商:NTE Electronics 功能描述:Trans JFET P-CH 3-Pin TO-92 |
| NTE327 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 180V IC=25A TO-3 CASE POWER AMP AND SWITCH FOR INDUSTRIAL 制造商:NTE Electronics 功能描述:T-NPN- SI-PWR AMP- SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:50; Operating Temperature Min:-65C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 |
| NTE328 | 制造商:NTE Electronics 功能描述:T-NPN- SI-PWR AMP- SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 120V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:120; No. of Pins:2 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 120V 50A 3-Pin(2+Tab) TO-3 |
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