参数资料
型号: NTE384
厂商: NTE Electronics, Inc.
英文描述: Silicon NPN Transistor High Voltage Power Amp/Switch
中文描述: 硅NPN晶体管高压功率放大器/开关
文件页数: 2/2页
文件大小: 22K
代理商: NTE384
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Dynamic Characteristics
(V+ = 11.2V, f
o
= 10.7MHz,
f =
±
75kHz, f
m
= 400Hz)
Input Limiting Threshold
V
IN(LIM)
AM Rejection
AMR
Test Conditions
Min
Typ
Max
Unit
250
600
μ
V
dB
AM: 1kHz @ 30%, V
IN
= 100mV
55
Recovered AF Voltage (At Pin12)
V
O(AF)
THD
1.5
V
Total Harmonic Distortion
1
2
%
Audio Preamplifier
Voltage Gain
A
V(AF)
THD
V
IN
= 100mV, f = 400Hz
V
OUT
= 2V, f = 400Hz
21
dB
Total Harmonic Distortion
1.5
5.0
%
V
CC
Buffer Output
Tone Control
1
2
3
4
IF Input
IF Input Bias
GND
Zener Regulator
5
6
N.C.
7
De
Emphasis
14
13
12
11
Audio Input
Audio Output
N.C.
10
Detector
9
Detector
8
.600 (15.24)
1
7
14
8
.300
(7.62)
.200 (5.08)
Max
.100 (2.45)
.099 (2.5) Min
.785 (19.95)
Max
Pin Connection Diagram
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