- 您现在的位置：买卖IC网 > PDF目录363696 > NTE451 (NTE Electronics, Inc.) Silicon N-Channel JFET Transistor VHF/UHF Amplifier PDF资料下载
参数资料
| 型号： | NTE451 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon N-Channel JFET Transistor VHF/UHF Amplifier |
| 中文描述： | 硅N沟道场效应晶体管高频/超高频放大器 |
| 文件页数： | 1/2页 |
| 文件大小： | 23K |
| 代理商： | NTE451 |
NTE451
Silicon N–Channel JFET Transistor
VHF/UHF Amplifier
Absolute Maximum Ratings:
Drain–Gate Voltage, V
DG
Reverse Gate–Source Voltage, V
GSR
Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V
25V
30mA
350mW
2.8mW/
°
C
–65
°
to +150
°
C
–65
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GSS
I
G
= –1
μ
A, V
DS
= 0
I
GSS
V
GS
= –20V, V
DS
= 0
V
GS
= –20V, V
DS
= 0, T
A
= +100
°
C
V
GS(off)
I
D
= 10nA, V
DS
= 15V
–25
–
–
V
Gate Reverse Current
–
–
–1.0
nA
–
–
–0.2
nA
Gate–Source Cutoff Voltage
–0.5
–
–4.0
V
ON Characteristics
Zero–Gate–Voltage Drain Current
I
DSS
V
DS
= 15V, V
GS
= 0
4
–
20
mA
Small Signal Characteristics Characteristics
Forward Transfer Admittance
|y
fs
|
Re(y
is
)
|y
os
|
Re(y
os
)
g
fs
C
iss
C
rss
C
oss
V
DS
= 15V, V
GS
= 0, f = 1kHz
V
DS
= 15V, V
GS
= 0, f = 400MHz
V
DS
= 15V, V
GS
= 0, f = 1kHz
V
DS
= 15V, V
GS
= 0, f = 400MHz
V
DS
= 15V, V
GS
= 0, f = 400MHz
V
DS
= 15V, V
GS
= 0, f = 1MHz
V
DS
= 15V, V
GS
= 0, f = 1MHz
V
DS
= 15V, V
GS
= 0, f = 1MHz
3500
–
7000
μ
mho
μ
mho
μ
mho
μ
mho
μ
mho
pF
Input Admittance
–
–
1000
Output Admittance
–
–
60
Output Conductance
–
–
100
Forward Transconductance
3000
–
–
Input Capacitance
–
–
5
Reverse Transfer Capacitance
–
–
1
pF
Output Capacitance
–
–
2
pF
相关PDF资料 |
PDF描述 |
|---|---|
| NTE452 | Silicon N-Channel JFET Transistor VHF Amplifier, Mixer |
| NTE454 | MOSFET, N-Ch, Dual Gate, TV UHF/RF Amp, Gate Protected |
| NTE456 | N-Channel Silicon JFET General Purpose Amp, Switch |
| NTE457 | Silicon N-Channel JFET Transistor General Purpose Amp, Switch |
| NTE458 | N-Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE4510B | 制造商:NTE Electronics 功能描述:IC-CMOS UP/DOWN COUNTER 制造商:NTE Electronics 功能描述:Logic IC 制造商:NTE Electronics 功能描述:Logic IC ;RoHS Compliant: Yes |
| NTE4510BT | 制造商:NTE Electronics 功能描述:IC-CMOS UP/DWN COUNTER |
| NTE4511B | 制造商:NTE Electronics 功能描述:IC 制造商:NTE Electronics 功能描述:CMOS, BCD-to-Seven Segment Latch/Decoder/Driver 制造商:NTE Electronics 功能描述:BCD TO 7 LTCH DIP-16 制造商:NTE Electronics 功能描述:IC ;ROHS COMPLIANT: YES |
| NTE4511BT | 制造商:NTE Electronics 功能描述:IC-CMOS-LATCH DECODER |
| NTE4512B | 制造商:NTE Electronics 功能描述:IC-CMOS MULTIPLEXER 制造商:NTE Electronics 功能描述:8-CH DATA SELECTOR |
发布紧急采购，3分钟左右您将得到回复。