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参数资料
| 型号： | NTE5482 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Controlled Rectifier (SCR) 8 Amp |
| 中文描述： | 可控硅（晶闸管）8放大器 |
| 文件页数： | 1/2页 |
| 文件大小： | 22K |
| 代理商： | NTE5482 |
NTE5480 thru NTE5487
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type
package suited for industrial and consumer applications. These 8 amp devices are available in volt-
ages ranging from 25V to 600V.
Features:
Uniform Low–Level Noise–Immune Gate Triggering: I
GT
= 10mA Typ @ T
C
= +25
°
C
Low Forward “ON” Voltage: v
T
= 1V Typ @ 5A @ +25
°
C
High Surge–Current Capability: I
TSM
= 100A Peak
Shorted Emitter Construction
Absolute Maximum Ratings:
(T
J
= –40
°
to +100
°
C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
DRM
or V
RRM
NTE5480
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5481
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5482
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5483
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5484
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5485
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5486
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5487
(This device is discontinued)
Forward Current RMS, I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Surge Current (One Cycle, 60Hz, T
J
= –40
°
to +100
°
C, I
TSM
Circuit Fusing (t
≤
8.3ms, T
J
= –40
°
to +100
°
C), I
2
t
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage (Note 2), V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Case, R
thJC
Typical Thermal Resistance, Case–to–Ambient, R
thJA
Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a
negative potential applied to the anode.
25V
50V
100V
200V
300V
400V
500V
600V
8A
100A
40A
2
s
5W
0.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A
10V
–40
°
to +100
°
C
–40
°
to +150
°
C
1.5
°
C/W
50
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
相关PDF资料 |
PDF描述 |
|---|---|
| NTE5483 | Silicon Controlled Rectifier (SCR) 8 Amp |
| NTE5484 | Silicon Controlled Rectifier (SCR) 8 Amp |
| NTE5485 | Silicon Controlled Rectifier (SCR) 8 Amp |
| NTE5486 | Silicon Controlled Rectifier (SCR) 8 Amp |
| NTE5491 | Silicon Controlled Rectifier (SCR) 10 Amp |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE5483 | 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER2 制造商:NTE Electronics 功能描述:THYRISTOR, SCR, 8A, 200V, TO-64 制造商:NTE Electronics 功能描述:SCR-200 VRM8.0 A 制造商:NTE Electronics 功能描述:THYRISTOR, SCR, 8A, 200V, TO-64; Peak Repetitive Off-State Voltage, Vdrm:200V; Gate Trigger Current Max, Igt:30mA; On State RMS Current IT(rms):8A; Holding Current Max Ih:30mA; Gate Trigger Voltage Max Vgt:1.5V; Thyristor Case:TO-64 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 200V 100A 3-Pin TO-64 |
| NTE5484 | 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER- 300VRM 8A TO-64 制造商:NTE Electronics 功能描述:G/P SCR |
| NTE5485 | 制造商:NTE Electronics 功能描述:TO-64 400V 8A TRIAC 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 8A, 400V, TO-64; Peak Repetitive Off-State Voltage, Vdrm:400V; Gate Trigger Current Max, Igt:30mA; On State RMS Current IT(rms):8A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:30mA; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 400V 100A 3-Pin TO-64 |
| NTE5486 | 制造商:NTE Electronics 功能描述:SCR-500 VRM8.0 A |
| NTE5487 | 制造商:NTE 制造商全称:NTE Electronics 功能描述:Silicon Controlled Rectifier (SCR) 8 Amp |
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