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参数资料
| 型号： | NTE5498 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Controlled Rectifier (SCR) 12 Amp |
| 中文描述： | 可控硅（晶闸管）12安培 |
| 文件页数： | 2/2页 |
| 文件大小： | 22K |
| 代理商： | NTE5498 |
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Holding Current
I
H
R
GK
= 1k
Latching Current
I
L
R
GK
= 1k
Critical Rate of Voltage Rise
dv/dt
V
D
= .67 x V
DRM
, R
GK
= 1k
, T
J
= +125
°
C 100
Critical Rate of Current Rise
di/dt
I
G
= 50mA, di
G
/dt = 0.5A/
μ
s, T
J
= +125
°
C
Gate Controlled Delay Time
t
gd
I
G
= 50mA, di
G
/dt = 0.5A/
μ
s
Commutated Turn
–
Off Time
t
q
V
D
= .67 x V
DRM
, V
R
= 35V, I
T
= I
T(AV)
,
T
C
= +85
°
C
Test Conditions
Min Typ Max
–
–
–
–
–
100
–
–
–
–
–
Unit
mA
mA
V/
μ
s
A/
μ
s
ns
μ
s
40
30
–
–
500
50
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
Anode
Gate
.147 (3.75)
Dia Max
Anode
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