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参数资料
| 型号： | NTE56019 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | TRIAC, 25 Amp |
| 中文描述： | 可控硅，25安培 |
| 文件页数： | 2/2页 |
| 文件大小： | 21K |
| 代理商： | NTE56019 |
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
V
D
= 12V, T
C
=
–
40
°
to +125
°
C
Gate Trigger Voltage
V
GT
V
D
= 12V, Quadrants I, II, and III, Note 2
Holding Current
I
H
Gate Open, Note 1, Note 3
Gate Controlled Turn
–
On Time
t
gt
I
GT
= 500mA, 0.1
μ
s Rise Time
Critical Rate
–
of
–
Rise
dv/dt
V
D
= V
DRM
, Gate Open, T
C
= +125
°
C, Note 1
Critical Rate
–
of
–
Rise, Off
–
State
dv/dt
c
V
D
= V
DRM
, I
T
= 25A, di/dt = 13.5A/ms,
Gate Unenergized, Note 1
Test Conditions
Min
Typ
Max
Unit
Gate Trigger Current
I
GT
–
–
80
mA
–
–
2.5
V
–
–
100
mA
μ
s
V/
μ
s
V/
μ
s
–
4
–
250
–
–
5
–
–
Note 1. For either polarity of MT
2
with reference to MT
1
terminal.
Note 2. For either polarity of gate voltage with reference to electrode MT
1
.
Note 3. Initial On
–
State Current = 400mA (DC).
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
MT
1
.100 (2.54)
MT
2
Gate
.147 (3.75)
Dia Max
Isolated
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