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参数资料
型号： NTE56026
厂商： NTE Electronics, Inc.
英文描述： TRIAC, 40 Amp
中文描述： 可控硅，40安培
文件页数： 2/2页
文件大小： 22K
代理商： NTE56026
Electrical Characteristics:
(At Maximum Ratings and Indicated Case Temperatures unless otherwise
specified)
Parameter
Symbol
Test Conditions
T
J
= +100
°
C, Gate Open,
V
DROM
= Max Rating
T
C
= +25
°
C, I
T
= 100A (Peak)
T
C
= +25
°
C, Gate Open
T
C
= +100
°
C, At V
DROM
,
Gate Open
Min
Typ
Max
Unit
Peak Off
–
State Current
I
DROM
–
–
4
mA
Maximum On
–
State Voltage
V
T
–
–
2
V
DC Holding Current
I
HOLD
Critical
dv/dt
–
–
60
mA
Critical rate
–
of
–
Rise of Off
–
State
Voltage
NTE5693, NTE56022
–
200
–
V/
μ
s
V/
μ
s
V/
μ
s
V/
μ
s
NTE5695, NTE56024
–
150
–
NTE5697, NTE56026
–
100
–
Critical Rate
–
of
–
Rise of Commutation
Voltage
Commutating
dv/dt
T
C
= +75
°
C, Gate Unenergized,
v
D = V
DROM
, T = I
T(RMS)
,
Commutating di/dt = 16A/ms
T
C
= +25
°
C,
v
D = 12VDC,
R
L
= 30
3
–
–
DC Gate
–
Trigger Current
(T
2
+, Gate+; T
2
–
, Gate
–
) Quads I
–
II
(T
2
+, Gate
–
; T
2
–
, Gate+) Quads II
–
IV
DC Gate
–
Trigger Voltage
I
GT
–
–
–
–
50
80
mA
mA
V
GT
T
C
= +25
°
C,
v
D = 12VDC,
R
L
= 30
T
C
= +25
°
C,
v
D = V
DROM
,
I
GT
= 300mA, t
r
= 0.1
μ
s,
i
T = 10A
(Peak)
–
–
2.5
V
Gate
–
Controlled Turn
–
On Time
t
gt
–
3
–
μ
s
NTE5693, NTE5695, NTE5697
NTE56022, NTE56024, NTE56026
1/4
–
28 UNF
–
2A
(Isolated Stud)
Gate
MT
2
MT
1
.200 (5.08) Max
.562
(14.28)
Max
.1.193
(30.33)
Max
.453
(111.5)
Max
1/4
–
28 UNF
–
2A
MT
2
MT
1
Gate
.562
(14.28)
Max
1.260
(32.0)
Max
.445
(11.3)
Max
.595
(15.1)
Max
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