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参数资料
| 型号： | NTE56028 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | TRIAC, 40 Amp |
| 中文描述： | 可控硅，40安培 |
| 文件页数： | 2/2页 |
| 文件大小： | 24K |
| 代理商： | NTE56028 |
Electrical Characteristics:
(T
C
= +25
°
C and either polarity of MT
1
to MT
2
voltage unless
otherwise specified)
Parameter
Symbol
V
DRM
= 800V, T
J
= +25
°
C
V
DRM
= 800V, T
J
= +125
°
C
Peak Reverse Blocking Current
I
RRM
V
RRM
= 800V, T
J
= +25
°
C
V
RRM
= 800V, T
J
= +125
°
C
Peak On
–
State Voltage
V
TM
I
TM
= 56A (Peak), Note 3
Gate Trigger Current (Continuous DC)
MT
2
(+), G (+); MT
2
(
–
), G (
–
);
MT
2
(+), G (
–
)
MT
2
(
–
), G (+)
Gate Trigger Voltage (Continuous DC)
MT
2
(+), G (+); MT
2
(
–
), G (
–
);
MT
2
(+), G (
–
)
MT
2
(
–
), G (+)
Gate Non
–
Trigger Voltage
MT
2
(+), G (+); MT
2
(
–
), G (
–
);
MT
2
(+), G (
–
)
MT
2
(
–
), G (+)
Holding Current
I
H
V
D
= 12V, Gate Open
Gate Controlled Turn
–
On Time
t
gt
V
D
= 800V, I
TM
= 56A (Peak),
I
GT
= 200mA
Critical Rate of Rise of Off
–
State
Voltage
T
C
= +125
°
C
Critical Rate 0f Rise of Commutation
Voltage
Commutating di/dt = 13.4A/ms,
Gate Unenergized, T
C
= +75
°
C
Test Conditions
Min
Typ
Max
Unit
μ
A
mA
μ
A
mA
Peak Forward Blocking Current
I
DRM
–
–
10
–
–
2
–
–
10
–
–
2
–
1.40
1.85
V
I
GT
V
D
= 12V, R
L
= 100
,
–
25
50
mA
–
40
75
mA
V
GT
V
D
= 800V, R
L
= 100
,
–
1.1
2.0
V
–
1.3
2.5
V
V
GD
V
D
= 800V, T
J
= +125
°
C, R
L
= 10k,
0.2
–
–
V
0.2
–
–
V
–
30
75
mA
μ
s
–
1.5
–
dv/dt
V
D
= 800V, Exponential Waveform,
–
50
–
V/
μ
s
dv/dt(c)
V
D
= 800V, I
TM
= 56A (Peak),
–
5
–
V/
μ
s
Note 3. Pulse Width
≤
2ms, Duty Cycle
≤
2%.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
MT
1
.100 (2.54)
MT
2
/Tab
Gate
.147 (3.75)
Dia Max
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