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参数资料
| 型号： | NTE5932 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Power Rectifier Diode, 20 Amp |
| 中文描述： | 硅功率整流二极管，20安培 |
| 文件页数： | 2/2页 |
| 文件大小： | 24K |
| 代理商： | NTE5932 |
Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Average Forward Current
I
F (AV)
I
FSM
180
°
sinusoidal condition, T
C
= +150
°
C Max
t = 10ms
Sinusoidal Half Wave,
No voltage reapplied
20
A
Maximum Peak One
–
Cycle
Non
–
Repetitive Surge Current
400
A
t = 8.3ms
425
A
t = 10ms
100% rated voltage reapplied,
T
J
= +175
°
C
437
A
t = 8.3ms
462
A
Maximum I
2
t for Fusing
I
2
t
t = 10ms
No voltage reapplied,
Initial T
J
= +175
C
°
540
A
2
s
A
2
s
A
2
s
A
2
s
A
2
t = 8.3ms
493
Maximum I
2
t for Individual Device
Fusing
t = 10ms
100% rated voltage reapplied
765
t = 8.3ms
700
Maximum I
2
t
I
2
t
t = 0.1 to 10ms, No voltage reapplied, Note 1
7640
t
Maximum Peak Forward Voltage
V
FM
V
M (TO)
I
FM
= 63A, T
J
= +25
°
C
T
J
= +175
°
C
1.23
V
Maximum Value of Threshold
Voltage
Maximum Value of Forward Slope
Resistance
Note 1. I
2
t for time t
x
= I
2
Thermal
–
Mechanical Specifications:
0.78
V
r
t
T
J
= +175
°
C
7.55
m
t
t
x
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Operation Junction Temperature
T
J
T
stg
R
thJC
–
65 to + 175
°
C
°
C
K/W
Maximum Storage Temperature
–
65 to + 200
Maximum Internal Thermal Resistance
Junction
–
to
–
Case
Thermal Resistance, Case
–
to
–
Sink
DC operation
1.6
R
thCS
Mounting surface flat, smooth and
greased
Non
–
lubricated threads
0.25
K/W
Mounting Torque
T
1.2
–
1.5
(10.5
–
13.5)
11 (0.25)
m
N
(in
lb)
g (oz)
Approximate Weight
wt
.060 (1.52)
Dia Min
.405
(10.3)
Max
1.250 (31.75) Max
.437
(11.1)
Max
.175 (4.45) Max
.424 (10.8)
Dia Max
.250 (6.35) Max
.453
(11.5)
Max
10
–
32 NF
–
2A
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