参数资料
型号: NTE60
厂商: NTE Electronics, Inc.
英文描述: Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications
中文描述: 硅晶体管互补高功率音频,磁头定位的线性应用
文件页数: 2/2页
文件大小: 24K
代理商: NTE60
Electrical Characteristics (Cont’d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Second Breakdown
Second Breakdown Collector Current
with Base Forward Bias
I
S/b
V
CE
= 50V, t = 1s (non
repetitive)
V
CE
= 100V, t = 1s (non
repetitive)
5
μ
A
μ
A
1
ON Characteristics
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 5A
I
C
= 5A, I
B
= 500mA
V
CE
= 2V, I
C
= 5A
25
150
Collector
Emitter Saturation Voltage
V
CE(sat)
V
BE(on)
1
V
Base
Emitter On Voltage
2
V
Dynamic Characteristics
Current Gain
Bandwidth Product
f
T
V
CE
= 10V, I
C
= 500mA, f
test
= 0.5MHz
V
CB
= 10V, I
E
= 0, f
test
= 1MHz
2
MHz
Output Capacitance
C
ob
1000
pF
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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