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参数资料
| 型号： | NTE617 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Varactor Diode |
| 中文描述： | 变容二极管 |
| 文件页数： | 1/2页 |
| 文件大小： | 19K |
| 代理商： | NTE617 |
1
2
π
f C
T
R
S
NTE617
Varactor Diode
Description:
The NTE617 is a dual voltage–variable capacitance diode designed for FM tuning, general frequency
control and tuning, or any top–of–the–line application requiring back–to–back diode configurations
for minimum signal distortion and detuning. This device is supplied in the popular TO92 type plastic
package for high volume, economical requirements of consumer and industrial applications.
Features:
High Figure of Merit: Q = 140 (Typ) @ V
R
= 3V, f = 100MHz
Guaranteed Capacitance Range: 34 – 39pF @ V
R
= 3V
Dual Diodes – Save Space and Reduce Cost
Monolithic Chip Provides Near Perfect Matching: Guaranteed
±
1% (Max) Over Specified
Tuning Range
Absolute Maximum Ratings (Each Device):
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32V
200mA
280mW
2.8mW/
°
C
+125
°
C
–65
°
to +150
°
C
Electrical Characteristics (Each Device):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Reverse Breakdown Voltage
BV
R
I
R
= 10
μ
A
Reverse Voltage Leakage Current
I
R
T
A
= +25
°
C
T
A
= +60
°
C
Series Inductance
L
S
f = 250MHz, Lead Length
Case Capacitance
C
C
f = 1MHz, Lead Length
Diode Capactance Temperature
Coefficient
Diode Capacitance
C
T
V
R
= 3V, f = 1MHz
Figure of Merit
Q
V
R
= 3V, f = 100MHz, Note 1
Capacitance Ratio
C
R
C
3
/C
30
, f = 1MHz
Test Conditions
Min
32
–
–
–
–
–
Typ
–
–
–
6
0.18
280
Max
–
50
500
–
–
400
Unit
V
nA
nA
nH
pF
ppm/
°
C
V
R
= 30V
1/16”
1/16”
TC
C
V
R
= 4V, f = 1MHz
34
100
2.5
–
–
–
39
140
2.8
pF
Note 1. Q =
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