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参数资料
| 型号： | NTE6232 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Powerblock Module |
| 中文描述： | Powerblock模块 |
| 文件页数： | 1/2页 |
| 文件大小： | 27K |
| 代理商： | NTE6232 |
NTE6232
Powerblock Module
Description:
The NTE6232 uses 2 power diodes in series and the semiconductors are electrically isolated from
the metal base, allowing common heatsinks and compact assemblies to be built. This device is
intended for general purpose applications such as battery chargers, welders and plating equipment
and where high voltage and high current are required.
Features:
Standard Voltage
Electrically Isolated Base Plate
3500V
RMS
Isolating Voltage
High Surge Capability
Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (T
C
= +92
°
C, 180
°
Conduction, Half Sine Wave), I
F(AV)
Maximum RMS On–State Current, I
T(RMS)
Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, V
RRM
, V
DRM
Maximum Non–Repetitive Peak Reverse Voltage, V
RSM
Maximum Peak Reverse Current (T
J
= +125
°
C), I
RRM
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), V
ISO
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case (Per Module, DC Operation), R
thJC
Thermal Resistance, Case–to–Sink (Note 1), R
thCS
Note 1. Mounting surface flat, smooth and greased.
100A
141A
1600V
1700V
10mA
3500V
. . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . .
–40
°
to +150
°
C
–40
°
to +150
°
C
0.22
°
C/W
. . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.1
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Peak One–Cycle
Non–Repetitive Surge Current
I
FSM
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, 100% V
RRM
Reapplied, Initial T
J
= +150
C
°
1700
1780
2020
2110
A
A
A
A
Sinusoidal Half Wave, No Voltage
Reapplied, Initial T
J
= +150
C
°
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