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参数资料
| 型号： | NTE6410 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Unijunction Transistor (UJT) |
| 中文描述： | 单结晶体管（单结管） |
| 文件页数： | 1/2页 |
| 文件大小： | 19K |
| 代理商： | NTE6410 |
NTE6410
Unijunction Transistor (UJT)
Description:
The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and
timing circuits, sensing circuits and thyristor trigger circuits.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless other specified)
RMS Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak–Pulse Emitter Current (Note 1), I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Reverse Voltage, V
B2E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interbase Voltage (Note 2), V
B2B1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Duty cycle
≤
1%, PRR = 10 PPS
Note 2. Based upon power dissipation at T
A
= +25
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless other specified)
Parameter
Symbol
η
Interbase Resistance
R
BB
Interbase Resistance Temperature Coefficient
α
R
BB
Emitter Saturation Voltage
V
BE1(sat)
V
B2B1
= 10V, I
E
= 50mA, Note 4
Modulated Interbase Current
I
B2(Mod)
Emitter Reverse Current
I
EB2O
Peak–Point Emitter Current
I
P
Valley–Point Current
I
V
Base–One Peak Pulse Voltage
V
OB1
Note 3. Intrinsic standoff ratio, is defined in terms of peak–point voltage, V
P
, by means of the equa-
tion: V
P
=
η
V
B2B1
V
F
, where V
F
is approximately 0.49 volts at +25
°
C @ I
F
= 10
μ
A and de-
creases with temperature at approximately 2.5mV/
°
C. Components R
1
, C
1
, and the UJT
form a relaxation oscillator, the remaining circuitry serves as a peak–voltage detector. The
forward drop of Diode D
1
compensates for V
F
. To use, the “call” button is pushed, and R
3
is adjusted to make the current meter, M
1
, read full scale. When the “call” button is released,
the value of
η
is read directly from the meter, if full scale on the meter reads 1.0.
Note 4. Use pulse techniques: PW
～
300
μ
s, duty cycle
≤
2.0% to avoid internal heating, which may
result in erroneous readings.
300mW
3.0mW/
°
C
50mA
1.5A
30V
35V
–65
°
to +125
°
C
–65
°
to +150
°
C
Test Conditions
Min
Typ
Max
Unit
Intrinsic Standoff Ratio
V
B2B1
= 10V, Note 3
0.70
–
0.85
4.0
6.0
9.1
k
%/
°
C
V
0.1
–
0.9
–
2.5
–
V
B2B1
= 10V, I
E
= 50mA
V
B2E
= 30V, I
B1
= 0
V
B2B1
= 25V
V
B2B1
= 20V, R
B2
= 100
, Note 4
–
15
–
mA
μ
A
μ
A
mA
–
0.005
1.0
–
1.0
5.0
4.0
7.0
–
5.0
8.0
–
V
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