- 您现在的位置：买卖IC网 > PDF目录363703 > NTE67 (NTE Electronics, Inc.) MOSFET N-Ch, Enhancement Mode High Speed Switch PDF资料下载
参数资料
| 型号： | NTE67 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | MOSFET N-Ch, Enhancement Mode High Speed Switch |
| 中文描述： | MOSFET的N沟道，增强模式高速开关 |
| 文件页数： | 1/3页 |
| 文件大小： | 26K |
| 代理商： | NTE67 |
NTE67
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Description:
The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
Lower R
DS(ON)
Improved Inductive Ruggedness
Fast Switching Times
Lower Input Capacitance
Extended Safe Operating Area
Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (T
J
= +25
°
C to +150
°
C), V
DSS
Drain–Gate Voltage (R
GS
= 1M
, T
J
= +25
°
C to +125
°
C), V
DGR
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Drain Current, I
D
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 2), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 3), E
AS
Avalanche Current, I
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), T
L
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), R
thCS
0.24K/W
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 17mH, V
dd
= 50V, R
G
= 25
, Starting T
J
= +25
°
C.
400V
400V
±
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
4.5A
3.0A
18A
±
1.5A
290mJ
5.5A
75W
0.6W/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
–55
°
to +150
°
C
+300
°
C
1.67K/W
80K/W
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
相关PDF资料 |
PDF描述 |
|---|---|
| NTE6809 | Integrated Circuit NMOS, 8-Bit Microprocessor (MPU) |
| NTE6809E | Integrated Circuit NMOS, 8-Bit Microprocessor (MPU) |
| NTE6810 | Integrated Circuit 128 x 8-Bit Static Random Access Memory (SRAM) |
| NTE6821 | Integrated Circuit Peripheral Interface Adapter (PIA), NMOS, 1MHz |
| NTE6850 | Integrated Circuit NMOS, Asynchronous Communications Interface Adapter |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE68 | 制造商:NTE Electronics 功能描述:TRANSISTOR - PNP SILICONE - GENERAL PURPOSE HIGH POWER AUDIO AMP TO3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR PNP -250V TO-3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -250V TO-3 制造商:NTE Electronics 功能描述:T-PNP-SI-GEN PURP HI AMP 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -250V TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:250W; DC Collector Current:20A; DC Current Gain hFE:150; No. of Pins:2 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 250V 16A 3-Pin(2+Tab) TO-3 |
| NTE6800 | 制造商:NTE Electronics 功能描述:IC-MOS 8-BIT MICROPROCES. 制造商:NTE Electronics 功能描述:IC, 8BIT MPU, 1MHZ, DIP-40; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:40; Clock Frequency:1MHz; Filter Terminals:Through Hole; Mounting Type:Through Hole; Package / Case:40-DIP |
| NTE6809 | 制造商:NTE Electronics 功能描述:IC 8BIT MPU 4MHZ DIP-40 制造商:NTE Electronics 功能描述:IC, 8BIT MPU, 4MHZ, DIP-40 制造商:NTE Electronics 功能描述:DIP40 8-BIT HMOS 制造商:NTE Electronics 功能描述:IC, 8BIT MPU, 4MHZ, DIP-40; Series:-; Core Size:8bit; Program Memory Size:-; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Digital IC Case Style:DIP; No. of Pins:40; CPU Speed:4MHz; Embedded Interface Type:-; Frequency Typ:4MHz |
| NTE6809E | 制造商:NTE Electronics 功能描述:IC - NMOS 8-BIT MICROPROCESSOR 40 LEAD DIP 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:DIP40 8-BIT HMOS 制造商:NTE Electronics 功能描述:IC, 8BIT MPU, 1MHZ, 40-DIP; Memory Size:8bit; Memory Configuration:-; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:40; Operating Temperature Min:0C; Operating Temperature Max:70C |
| NTE6810 | 制造商:NTE Electronics 功能描述:SRAM 1K 450NS 24DIP 制造商:NTE Electronics 功能描述:IC, SRAM, 1KBIT, SERIAL, 450NS, 24-DIP; Memory Size:1Kbit; Memory Configuration:128 x 8; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Memory Case Style:DIP; No. of Pins:24; Access Time:450ns; Operating Temperature Min:0C |
发布紧急采购，3分钟左右您将得到回复。