参数资料
型号: NTE7080
厂商: NTE Electronics, Inc.
英文描述: Integrated Circuit Precision Voltage Reference Diode, 1.235V
中文描述: 集成电路高精度电压基准二极管,1.235V
文件页数: 1/2页
文件大小: 20K
代理商: NTE7080
NTE7080
Integrated Circuit
Precision Voltage Reference Diode,
1.235V
Description:
The NTE7080 is a micropower two–terminal band–gap voltage regulator diode in a TO92 type pack-
age. This device features exceptionally low dynamic impedance, low noise, and stable operation over
time and temperature. Tight voltage tolerances are achieved by on–chip trimming. The large dynam-
ic operating range enables this device to be used in applications with widely varying supplies with ex-
cellent regulation. Extremely low operating current make the NTE7080 ideal for micropower circuitry
like portable instrumentation, regulators, and other analog circuitry where extended battery life is re-
quired.
Features:
1.0% Tolerance
Low Temperature Coefficient
1.0
Dynamic Impedance
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Reverse Current, I
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30mA
10mA
0 to +70
°
C
+150
°
C
–65
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
(BR)R
I
Rmin
I
R
20mA
I
Rmin
I
R
20mA, T
A
= 0 to +70
°
C
1.223 1.235 1.247
V
1.210
1.260
V
μ
A
μ
A
mV
Minimum Operating Current
I
Rmin
8.0
15.0
T
A
= 0 to +70
°
C
I
Rmin
I
R
1mA
I
Rmin
I
R
1mA, T
A
= 0 to +70
°
C
I
Rmin
I
R
20mA
I
Rmin
I
R
20mA, T
A
= 0 to +70
°
C
20.0
Reverse Breakdown Voltage Change
with Current
V
(BR)R
1.0
1.5
mV
20.0
mV
25.0
mV
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