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参数资料
| 型号： | NTE70 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Voltage Power Amp, Switch |
| 中文描述： | 硅NPN晶体管高压功率放大器，开关 |
| 文件页数： | 1/2页 |
| 文件大小： | 23K |
| 代理商： | NTE70 |
NTE70
Silicon NPN Transistor
High Voltage Power Amp, Switch
Description:
The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes
a manufacturing technology that provides surface stabilization for high voltage operation and en-
hances long term reliability.
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Continuous Base Current, I
B
Total Power Dissipation (T
C
= +25
°
C), P
D
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
180V
150V
6V
20A
20A
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +200
°
C
–65
°
to +200
°
C
0.7
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
EBO
I
CEX
I
C
= 50mA
V
EB
= 6V
V
CE
= Rated V
CB
, V
EB
= 1.5V
V
CE
= Rated V
CB
, V
EB
= 1.5V, T
C
= +150
°
C
150
–
–
V
μ
A
μ
A
mA
Emitter Cutoff Current
–
–
100
Collector Cutoff Current
–
–
10
–
–
1.0
ON Characteristics
(Note 1)
DC Current Gain
h
FE
V
CE
= 4V, I
C
= 20A
I
C
= 50A, I
B
= 10A
I
C
= 20A, I
B
= 2A
I
C
= 50A, I
B
= 10A
50
–
–
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
–
–
3.0
V
Base–Emitter Saturation Voltage
–
–
1.8
V
–
–
3.5
V
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%.
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