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参数资料
| 型号： | NTE7144 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit BIMOS Operational Amplifier w/MOSFET Input, Bipolar Output |
| 中文描述： | 集成电路BIMOS运算放大器瓦特/ MOSFET的输入，双极性输出 |
| 文件页数： | 2/4页 |
| 文件大小： | 31K |
| 代理商： | NTE7144 |
Absolute Maximum Ratings:
DC Supply Voltage (Between V+ and V
–
Terminals)
Differential
–
Mode Input Voltage
Common
–
Mode DC Input Voltage
Input
–
Terminal Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation (Without Heatsink), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above +55
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation (With Heatsink), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above +55
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16
”
from case, 10sec max), T
L
Output Short
–
Circuit Duration (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Short circuit may be applied to GND or to either supply.
36V
±
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(V+ +8V) to (V
–
–
0.5V)
1mA
630mW
6.67mW/
°
C
1W
16.7mW/
°
C
–
55
°
to +125
°
C
–
65
°
to +150
°
C
+265
°
C
Unlimited
. . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C, V+ = +15V, V
–
=
–
15V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
|V
IO
|
|I
IO
|
I
I
A
OL
–
2
5
mV
Input Offset Current
–
0.5
20
pA
Input Current
–
10
40
pA
Large
–
Signal Voltage Gain
Note 2
20k
100k
–
V/V
86
100
–
dB
μ
V/V
dB
Common
–
Mode Rejection Ratio
CMRR
–
32
320
70
90
–
Common
–
Mode Input
–
Voltage
Range
V
ICR
–
15
–
15.5
to
+12.5
+12
V
Power Supply Rejection Ratio
V
IO
/
V
PSSR
–
100
150
μ
V/V
dB
76
80
–
Maximum Output Voltage
V
OM
+
V
OM
–
I+
R
L
= 2k
+12
+13
–
V
–
14
–
14.4
–
V
Supply Current
–
4
6
mA
Device Dissipation
P
D
–
120
180
mW
μ
A/
°
C
T
pF
μ
V
Input Offset Voltage Temp. Drift
V
IO
/
T
R
I
C
I
R
O
e
n
–
6
–
Input Resistance
–
1.5
–
Input Capacitance
–
4
–
Output Resistance
–
60
–
Equivalent Wideband Input Noise
Voltage
BW = 140kHz, R
S
= 1M
–
48
–
Equivalent Input Noise Voltage
e
n
R
S
= 100
f
–
1kHz
–
40
–
nV/
√
Hz
nV/
√
Hz
f = 10kHz
–
12
–
Short
–
Circuit Current to Opposite Supply
Source
I
OM
+
I
OM
–
–
40
–
mA
Sink
–
18
–
mA
Note 2. V
O
= 26V
P
–
P
, +12V,
–
14V and R
L
= 2k
.
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