参数资料
型号: NTE7152
厂商: NTE Electronics, Inc.
元件分类: 基准电压源/电流源
英文描述: Integrated Circuit Hybrid Switching Voltage Regulator
中文描述: 混合集成电路开关稳压器
文件页数: 1/2页
文件大小: 27K
代理商: NTE7152
NTE7152
Integrated Circuit
Hybrid Switching Voltage Regulator
Features:
Built–In Power Transistor NPN Triple Diffused Planar
On–Line SMPS for Color TV
Output Voltage is Pre–Fixed – No External Adjustment is Required
Absolute Maximum Ratings:
Peak Input Voltage, V
IN
Input Current, I
IN
Power Dissipation (T
C
= +100
°
C), P
D
Maximum Power Transistor Junction Temperature, T
J
Operating Temperature Range (T
C
), T
opr
Storage Temperature Range, T
stg
900V
6A
27W
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–20
°
to +125
°
C
–30
°
to +125
°
C
Electrical Characteristics:
(Note 1)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Voltage
V
O
V
O
V
IN
= 220V, I
O
= 500mA
I
IN
= 6mA
Reg
LOAD
V
IN
= 180V to 280V
V
IN
= 220V, I
O
= 300mA to 500mA
V
IN
= 180V, I
O
= 500mA, Note 2
101.5
103.0
104.5
V
Detecting Voltage (Fixed Output)
102.4
103.4
104.4
V
Load Regulation
Initial Value
±
1
Initial Value
±
1
(
V
IN
/ V
O
) x 100
1% Typ.
V
V
Output Ripple
Output Voltage Temperature
Coefficient
T
C
= –20
°
to +100
°
C, I
IN
= 6mA
±
4
mV/
°
C
Saturation Voltage
V
CE(sat)
V
BE(sat)
h
FE
I
CEX
I
EBO
R
thJC
I
C
= 2A, I
B
= 400mA
I
C
= 2A, I
B
= 400mA
I
C
= 1A, V
CE
= 4V
V
CE
= 900V, V
BE
= –1.5V
V
BE
= 5.5V
Between Junction and Stem
Upper Surface
1.0
V
1.5
V
DC Current Gain
10
30
Collector Cutoff Current
1.0
mA
Emitter Cutoff Current
1.0
mA
°
C/W
Power Transistor Thermal
Resistance
1.8
Switching Time
t
s
t
f
V
CE
= 250V, I
C
= 1A, I
B1
= 150mA,
I
B2
= 500mA
7
μ
s
μ
s
1
Note 1. Recommended Case Temperature: T
opr
= +100
°
C.
Note 2.
V
IN
: Input Ripple Voltage
V
O
: Output Ripple Voltage
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