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参数资料
| 型号： | NTE72 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Current Amp, Fast Switch |
| 中文描述： | 硅NPN晶体管高电流放大器，快速开关 |
| 文件页数： | 2/2页 |
| 文件大小： | 25K |
| 代理商： | NTE72 |
Electrical Characteistics (Cont’d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
High Frequency Current Gain
h
fe
I
C
= 2A, V
CE
= 5V, f = 20MHz
I
C
= 5A, I
B
= 0.5A, Note 3
I
C
= 10A, I
B
= 1A, Note 3
I
C
= 5A, I
B
= 0.5A, Note 3
I
C
= 10A, I
B
= 1A, Note 3
I
C
= 5A, V
CE
= 5V, Note 3
V
CE
= 60V, V
BE
= 0
V
CE
= 60V, V
EB
= 2V, T
C
= +150
°
C
V
EB
= 5V, I
C
= 0
V
CB
= 10V, I
E
= 0, f = 1MHz
2.0
2.8
–
Collector
–
Emitter Saturation Voltage
V
CE(sat)
–
0.55
0.9
V
–
1.1
1.5
V
Base
–
Emitter Saturation Voltage
V
BE(sat)
–
1.2
1.8
V
–
1.7
2.2
V
Base
–
Emitter ON Voltage
V
BE(on)
I
CES
I
CEX
I
EBO
C
cb
–
–
1.8
V
μ
A
μ
A
μ
A
pF
Collector Cutoff Current
–
0.014
1.0
Collector Reverse Current
–
–
500
Emitter Cutoff Current
–
–
1.0
Collector
–
Base Capacitance
–
235
275
Note 3. Pulse Conditions: Pulse Width = 300
μ
s, Duty Cycle = 1%.
Base
Emitter
Collector/
Isolated Stud
.682
(17.32)
.400
(10.16)
.600 (19.15)
Dia
.061 (1.53) Dia
.412
(10.44)
.440
(11.17)
.115
(2.93)
.755
(19.15)
1/4
–
28 UNF
–
2A
.090 (2.28) Max
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