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| 型号： | NTE75 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Power Amplifier, Switch (Stud Mount) |
| 中文描述： | 高硅NPN晶体管功率放大器，开关（螺柱山） |
| 文件页数： | 1/2页 |
| 文件大小： | 26K |
| 代理商： | NTE75 |
NTE75
Silicon NPN Transistor
High Power Amplifier, Switch
(Stud Mount)
Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.
Features:
Fast Switching: t
r
, t
f
= 300ns (Max)
Low Saturation Voltage: 250mV max @ 1A
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
DC Collector Current, I
C
Power Dissipation, P
D
T
A
= +25
°
C
T
C
= +100
°
C
Operating Temperature Range, T
opr
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
110V
80V
8V
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2W
30W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +200
°
C
–65
°
to +200
°
C
3.33
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CEX
I
CBO
I
EBO
I
C
= 10
μ
A
I
C
= 100mA, Note 1
I
E
= 10
μ
A
V
CE
= 60V
V
CE
= 110V, V
EB
= 500mV
V
CB
= 80V
V
EB
= 6V
110
–
–
V
Collector–Emitter Breakdown Voltage
80
–
–
V
Emitter–Base Breakdown Voltage
8
–
–
V
μ
A
μ
A
μ
A
μ
A
Collector–Emitter Cutoff Current
–
–
100
–
–
10
Collector–Base Cutoff Current
–
–
0.4
Emitter–Base Cutoff Current
–
–
0.4
Note 1. Pulse Width = 300
μ
s, Duty Cycle
≤
2%.
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