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参数资料
| 型号： | NTE85 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor General Purpose Amplifier |
| 中文描述： | 硅NPN晶体管通用放大器 |
| 文件页数： | 1/2页 |
| 文件大小： | 20K |
| 代理商： | NTE85 |
NTE85
Silicon NPN Transistor
General Purpose Amplifier
Applications:
Medium Power Amplifiers
Class B Audio Outputs
Hi–Fi Drivers
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
30V
50V
5V
500mA
625mW
5.0mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
83.3
°
C/W
200
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
be impaired.
Note 2. These ratings are based on a maximum junction temperature of 150
°
C.
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Collector–Emitter Breakdown
Voltage
Collector–Base Breakdown Voltage V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
Emitter–Base Breakdown Voltage
V
(BR)EBO
I
E
= 100
μ
A, I
C
= 0
Collector Cutoff Voltage
Emitter Cutoff Current
Test Conditions
Min
30
Typ
–
Max
–
Unit
V
V
(BR)CEO
I
C
= 10mA, I
B
= 0, Note 3
50
5.0
–
–
–
–
–
–
–
–
V
V
nA
nA
I
CBO
I
EBO
V
CB
= 20V, I
E
= 0
V
BE
= 3V, I
C
= 0
100
100
Note 3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
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