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参数资料
| 型号： | NTE87 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications |
| 中文描述： | 硅晶体管互补高功率音频，磁头定位的线性应用 |
| 文件页数： | 2/2页 |
| 文件大小： | 23K |
| 代理商： | NTE87 |
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector
–
Emitter Breakdown Voltage
V
CEO(sus)
I
C
= 100mA, Note 3
I
CEO
V
CE
= 250V
I
CEX
V
CE
= 250V, V
BE(off)
= 1.5V
I
EBO
V
EB
= 5V
250
–
–
V
Collector Cutoff Current
–
–
1
mA
μ
A
μ
A
–
–
500
Emitter Cutoff Current
–
–
500
Second Breakdown
Second Breakdown Collector Current
with Base Forward Bias
I
S/b
V
CE
= 40V, t = 0.5s (non
–
repetitive)
V
CE
= 100V, t = 0.5s (non
–
repetitive)
5
–
–
A
1.4
–
–
A
ON Characteristics
(Note 3)
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 4A
I
C
= 2A, I
B
= 200mA
I
C
= 4A, I
B
= 400mA
V
CE
= 2V, I
C
= 4A
20
–
100
5
–
–
Collector
–
Emitter Saturation Voltage
V
CE(sat)
–
–
0.8
V
–
–
–
2.5
V
Base
–
Emitter On Voltage
V
BE(on)
–
2
V
Dynamic Characteristics
Current Gain
–
Bandwidth Product
f
T
V
CE
= 10V, I
C
= 1A, f
test
= 1MHz
V
CB
= 10V, I
E
= 0, f
test
= 1MHz
4
–
–
MHz
Output Capacitance
C
ob
–
–
500
pF
Note 3. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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