参数资料
型号: NTE889
厂商: NTE Electronics, Inc.
英文描述: Integrated Circuit Dual, Low Power, JFET OP Amplifier
中文描述: 集成电路双通道,低功耗,JFET运算放大器
文件页数: 1/3页
文件大小: 27K
代理商: NTE889
NTE889M
Integrated Circuit
Dual, Low Power, JFET OP Amplifier
Description:
The NTE889M is a JFET–input operational amplifier in an 8–Lead DIP type package designed for low
power applications and features high input impedance, low input bias current, and low input offset
current. Advanced design techniques allow for higher slew rates, gain bandwidth products, and out-
put swing.
Features:
Low Supply Current: 200
μ
A/Amplifier
Low Input Bias Current: 5pA
High Gain Bandwidth: 2MHz
High Slew rate: 6V/
μ
s
High Input Impedance: 10
12
Large Output Voltage Swing:
±
14V
Output Short Circuit Protection
Absolute Maximum Ratings:
Supply Voltage (From V
CC
to V
EE
), V
S
Input Differential Input Voltage (Note 1), V
IDR
Input Voltage Range (Note 1, Note 2), V
IR
Output Short–Circuit Duration (Note 3), t
s
Operating Junction Temperature (Note 3), T
J
Storage Temperature range, T
stg
Storage temperature Range, T
stg
Note 1. Differential voltages are at the non–inverting input terminal with respect to the inverting input
terminal.
Note 2. The magnitude of the input voltage must never exceed the magnitude of the supply voltage
or 15V, whchever is less.
Note 3. Power dissipation must be considered to ensure maximun junction temperature (T
J
) is not
exceeded.
+36V
±
30V
±
15V
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Indefinite Seconds
0
°
to +70
°
C
+150
°
C
–60
°
to +150
°
C
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