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参数资料
| 型号： | NTE889M |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit Dual, Low Power, JFET OP Amplifier |
| 中文描述： | 集成电路双通道，低功耗，JFET运算放大器 |
| 文件页数： | 2/3页 |
| 文件大小： | 27K |
| 代理商： | NTE889M |
DC Electrical Characteristics:
(V
CC
= +15V, V
EE
=
–
15V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
V
IO
V
O
= 0,
R
S
= 50
T
A
= +25
°
C
T
A
= 0
°
to +70
°
C
–
3
15
mV
–
–
20
mV
Temperature Coefficient of
Input Offset Voltage
Input Offset Current
VIO
V
O
= 0, R
S
= 50
, T
A
= 0
°
to +70
°
C
–
10
–
μ
V/
°
C
I
IO
V
CM
= 0, V
O
= 0
T
A
= +25
°
C
T
A
= 0
°
to +70
°
C
T
A
= +25
°
C
T
A
= 0
°
to +70
°
C
–
5
200
pA
–
–
5
nA
Input Bias Current
I
IB
V
CM
= 0, V
O
= 0
–
30
200
pA
–
–
10
nA
Common
–
Mode Input Voltage Range
V
ICR
T
A
= +25
°
C
T
A
= 0
°
to +70
°
C
R
L
= 10k
, T
A
= +25
°
C
R
L
= 10k
, T
A
= 0
°
to +70
°
C
V
O
=
±
10V,
R
L
≥
10k
–
+14.5
+11
V
–
11
±
10.0
±
10.0
3
–
12
±
14
–
–
V
Maximim Peak Output Voltage Swing
V
OM
–
V
–
V
Large
–
Signal Differential Voltage
Amplification
A
VD
T
A
= +25
°
C
T
A
= 0
°
to +70
°
C
58
–
V/mV
3
–
–
V/mV
Gain Bandwidth Product
GBW
f = 200kHz
T
A
= +25
°
C
V
CM
= V
ICR
min, V
O
= 0, R
S
= 50
,
T
A
= +25
°
C
V
CM
= 0, V
O
= 0, R
S
= 50
,
T
A
= +25
°
C
No Load, V
O
= 0, T
A
= +25
°
C
No Load, V
O
= 0, T
A
= +25
°
C
f = 10kHz
V
in
=
–
10V to +10V, R
L
= 10k
,
C
L
= 100pF, A
V
= +1.0
V
in
= 20mV, R
L
= 10k
,
C
L
= 100pF, A
V
= +1.0
–
2
–
MHz
dB
Input Resistance
r
i
–
10
12
–
Common
–
Mode Rejection Ratio
CMRR
70
84
–
Supply Volatge Rejection Ratio
PSRR
70
86
–
dB
Total Power Dissipation (Each Amp)
P
D
I
D
CS
–
6.0
7.5
mW
μ
A
dB
V/
μ
s
Power Supply Current (Each Amp)
–
200
250
Channel Separation
–
120
–
Slew Rate
SR
2
6
–
Rise Time
t
r
–
0.1
–
μ
s
%
μ
s
Overshoot
OS
–
10
–
Setting Time
t
S
V
CC
= +15V,
V
EE
=
–
15V,
A
V
=
–
1.0,
R
L
= 10k
,
V
O
= 0 to 10V
step
R
S
= 100
, f = 1kHz
to within 10mV
–
1.6
–
to within 1.0mV
–
2.2
–
μ
s
Equivalent Input Noise
e
n
–
47
–
nV/
Hz
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