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参数资料
| 型号： | NTE918 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit High Speed Operational Amplifier |
| 中文描述： | 集成电路的高速运算放大器 |
| 文件页数： | 2/4页 |
| 文件大小： | 31K |
| 代理商： | NTE918 |
Absolute Maximum Ratings:
Power Supply Voltage, V
S
Power Dissipation (Note 1), P
D
Differential Input Current (Note 2), I
ID
Input Voltage (Note 3), V
I
Output Short
–
Circuit Duration, t
S
Operating Temperature Range, T
opr
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 10sec), T
L
NTE918 (Metal Can)
NTE918M (Plastic DIP)
NTE918SM (Surface Mount)
Vapor Phase (60sec)
Infrared (15sec)
Note 1. The maximum junction temperature of these devices is +110
°
C. For operating at elevated
temperatures, the NTE918 must be derated based on a thermal resistance of +150
°
C/W,
junctio to ambient, or +45
°
C/W, junction to case. The thermal resistance of the NTE918M
and the NTE918SM is +100
°
C/W, junction to ambient.
Note 2. The inputs are shunted with back
–
to
–
back diodes for overvoltage protection. Therefore, ex-
cessive current will flow if a differential input voltage in excess of 1V is applied between the
inputs unless some limiting resistance is used.
Note 3. For supply voltages less than
±
15V, the absolute maximum input voltage is equal to the supply
voltage.
±
20V
500mW
±
10mA
±
15V
Indefinite
0
°
to +70
°
C
–
65
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300
°
C
+260
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+215
°
C
+220
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(
±
5V
≤
V
S
≤
±
20V, 0
°
≤
T
A
≤
+70
°
C, Note 4 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
V
IO
–
–
–
–
–
–
–
4
–
30
–
150
3.0
5
–
200
70
15
±
13
–
–
80
15
10
300
200
750
500
–
10
–
–
–
–
–
–
–
–
V
V
nA
nA
nA
nA
M
mA
V/mV
V/mV
V/
μ
s
MHz
V
V
dB
dB
T
A
= +25
°
C
Input Offset Current
I
IO
T
A
= +25
°
C
Input Bias Current
I
IB
T
A
= +25
°
C
T
A
= +25
°
C
Input Resistance
Supply Current
Large Signal Voltage Gain
r
i
0.5
–
20
25
50
–
±
12
±
11.5
100
65
I
CC
, I
EE
T
A
= +25
°
C
A
V
V
S
=
±
15V, V
OUT
=
±
10V, R
L
≥
2k
V
S
=
±
15V, V
OUT
=
±
10V, R
L
≥
2k
, T
A
= +25
°
C
SR
V
S
=
±
15V, A
V
= 1, T
A
= +25
°
C, Note 5
BW
V
S
=
±
15V, T
A
= +25
°
C
V
O
V
S
=
±
15V, R
L
= 2k
V
I
V
S
=
±
15V
CMRR
PSRR
Slew Rate
Small Signal Bandwidth
Output Voltage Swing
Input Voltage Range
Common
–
Mode Rejection Ratio
Supply Voltage Rejection Ratio
Note 4. Power supplies must be bypassed with 0.1
μ
F disc capacitors.
Note 5. Slew rate is tested with V
S
=
±
15V. These devices are in a unity
–
gain non
–
inverting configuration.
V
IN
is stepped from
–
7.5V to +7.5V and vice versa. The slew rates between
–
5V and +5V and
vice versa are tested and guaranteed to exceed 50V/
μ
s.
相关PDF资料 |
PDF描述 |
|---|---|
| NTE918M | Integrated Circuit High Speed Operational Amplifier |
| NTE918SM | Integrated Circuit High Speed Operational Amplifier |
| NTE919 | Integrated Circuit High Speed Dual Comparator |
| NTE919D | Integrated Circuit High Speed Dual Comparator |
| NTE922 | Integrated Circuit Voltage Comparator |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE918M | 制造商:NTE Electronics 功能描述:IC-HI-SPEED PREC. OP AMP 制造商:NTE Electronics 功能描述:DIP-8 HI-SPD OP AMP 制造商:NTE Electronics 功能描述:OP Amp Single GP ±20V 8-Pin Mini-DIP |
| NTE918SM | 制造商:NTE Electronics 功能描述:IC-HI SPEED OP-AMP 制造商:NTE Electronics 功能描述:OP Amp Single GP ±20V 8-Pin SOIC |
| NTE919 | 制造商:NTE Electronics 功能描述: |
| NTE919D | 制造商:NTE Electronics 功能描述:IC-DUAL HI-SPEED COMPARA. 制造商:NTE Electronics 功能描述:Comparator Dual ±18V/36V 14-Pin PDIP |
| NTE92 | 制造商:NTE Electronics 功能描述:T-NPN SI-HI PWR AF PO 制造商:NTE Electronics 功能描述:TRANSISTOR BIPOLAR NPN 200V 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 200V, 15A 制造商:NTE Electronics 功能描述:T-NPN- SI-HI PWR AF PO 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 200V, 15A; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:200V; Transition Frequency Typ ft:20MHz; Power Dissipation Pd:150W; DC Collector Current:15A; DC Current Gain hFE:30; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 200V 15A 3-Pin(3+Tab) |
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