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参数资料
型号： NTE929
厂商： NTE Electronics, Inc.
英文描述： Integrated Circuit General Purpose, High Current, NPN Transistor Array
中文描述： 通用集成电路，高电流，NPN晶体管阵列
文件页数： 2/2页
文件大小： 23K
代理商： NTE929
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
For Each Transistor
Collector
–
Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)CIO
V
(BR)EBO
I
CEO
I
CBO
h
FE
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
CI
= 100
μ
A, I
B
= 0, I
E
= 0
I
E
= 500
μ
A, I
C
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 10V, I
E
= 0
V
CE
= 3V, I
C
= 10mA
V
CE
= 3V, I
C
= 50mA
V
CE
= 3V, I
C
= 10mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 3V, I
C
= 10mA
V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 1mA
20
60
–
V
Collector
–
Emitter Breakdown Voltage
15
24
–
V
Collector
–
Substrate Breakdown Voltage
20
60
–
V
Emitter
–
Base Breakdown Voltage
5.0
6.9
–
V
μ
A
μ
A
Collector Cutoff Current
–
–
10
–
–
1
DC Forward Current
40
76
–
40
75
–
Base
–
Emitter Voltage
V
BE
V
CE(sat)
f
T
V
IO
I
IO
0.65
0.74
0.85
V
Collector
–
Emitter Saturation Voltage
–
0.4
0.7
V
Gain
–
Bandwidth Product
–
450
–
MHz
Absolute Input Offset Voltage
–
1.2
5.0
mV
μ
A
Absolute Input Offset Current
–
0.7
2.5
Pin Connection Diagram
Collector Q
4
Collector Q
5
Base Q
5
Emitter Q
4
Base Q
4
Emitter Q
5
Emitter Q
1
Base Q
1
Emitter Q
3
Emitter Q
2
Collector Q
3
Base Q
3
Base Q
2
Collector Q
2
Collector Q
1
1
2
3
4
5
Substrate
6
7
8
16
15
14
13
12
11
10
9
16
9
1
8
.785 (19.9)
Max
.200 (5.08)
Max
.245
(6.22)
Min
.300
(7.62)
.700 (17.7)
.100 (2.54)
.260 (6.6) Max
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