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参数资料
| 型号： | NTE98 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor HV Darlington Power Amp, Switch |
| 中文描述： | 高压硅NPN晶体管达林顿功率放大器，开关 |
| 文件页数： | 2/3页 |
| 文件大小： | 28K |
| 代理商： | NTE98 |
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
(Note 2)
Collector
–
Emitter Sustaining Voltage
V
CEO(sus)
V
CEX(sus)
I
C
= 100mA, I
B
= 0, V
clamp
= 500V
I
C
= 2A, V
clamp
= 500V, T
C
= +100
°
C
I
C
= 5A, V
clamp
= 500V, T
C
= +100
°
C
V
CEV
= 700V, V
BE(off)
= 1.5V
V
CEV
= 700V, V
BE(off)
= 1.5V, T
C
= +150
°
C
V
CE
= 700V, R
BE
= 50
, T
C
= +100
°
C
V
EB
= 2V, I
C
= 0
500
–
–
V
500
–
–
V
375
–
–
V
Collector Cutoff Current
I
CEV
–
–
0.25
mA
–
–
5.0
mA
I
CER
I
EBO
–
–
5.0
mA
Emitter Cutoff Current
–
–
175
mA
ON Characteristics
(Note 3)
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
= 10A
I
C
= 10A, I
B
= 500mA
I
C
= 10A, I
B
= 500mA, T
C
= +100
°
C
I
C
= 20A, I
B
= 2A
I
C
= 10A, I
B
= 500mA
I
C
= 10A, I
B
= 500mA, T
C
= +100
°
C
I
F
= 5A, Note 3
40
–
400
30
–
300
Collector
–
Emitter Saturation Voltage
V
CE(sat)
–
–
2.0
V
–
–
2.5
V
–
–
3.5
V
Base
–
Emitter Saturation Voltage
V
BE(sat)
–
–
2.5
V
–
–
2.5
V
Diode Forward Voltage
V
F
–
3
5
V
Dynamic Characteristics
Small
–
Signal Current Gain
h
fe
C
ob
V
CE
= 10V, I
C
= 1A, f
test
= 1MHz
V
CB
= 50V, I
E
= 0, f
test
= 100kHz
8
–
–
Output Capacitance
100
–
325
pF
Switching Characteristics
(Resistive Load)
Delay Time
t
d
t
r
t
s
t
f
V
CC
= 250V, I
C
= 10A, I
B1
= 500mA,
V
BE(off)
= 5V, t
p
= 50
s, Duty Cycle
2%
μ
≤
–
0.12
0.25
μ
s
μ
s
μ
s
μ
s
Rise Time
–
0.5
1.5
Storage Time
–
0.8
2.0
Fall Time
–
0.2
0.6
Switching Characteristics
(Inductive Load, Clamped)
Storage Time
t
sv
t
c
t
sv
t
c
I
C
= 10A Peak, V
clamp
= 250V,
I
B1
= 500mA, V
BE(off)
= 5V, T
C
= +100
C
°
–
1.5
3.5
μ
s
μ
s
μ
s
μ
s
Crossover Time
–
0.36
1.6
Storage Time
I
C
= 10A Peak, V
clamp
= 250V,
I
B1
= 500mA, V
BE(off)
= 5V, T
C
= +25
C
°
–
0.8
–
Crossover Time
–
0.18
–
Note 2. Pulse test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%.
Note 3. The internal Collector
–
Emitter diode can eliminate the need for an external diode to clamp
inductive loads. Tests have shown that the Forward Recovery Voltage (V
F
) of this diode is
comparable to that of typical fast recovery rectifiers.
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