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参数资料
| 型号： | NTES1P02 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET 50 mAmps, 20 Volts P-Channel(50mA,20V,P沟道增强型MOS场效应管) |
| 中文描述： | 50 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-75, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 33K |
| 代理商： | NTES1P02 |
NTES1P02
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100
μ
A)
V(BR)DSS
20
–
–
Vdc
Drain Cut–off Current
(VDS = 20 Vdc, VGS = 0 Vdc)
IDSS
–
–
1.0
μ
Adc
Gate–Body Leakage Current (VGS = 7.0 Vdc, VDS = 0)
IGSS
–
–
1.0
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 3.0 Vdc, ID = 0.1 mAdc)
Vth
0.5
–
1.5
Vdc
Drain–to–Source On–Resistance
(VGS = 2.5 Vdc, ID = 10 mAdc)
RDS(on)
–
7.0
15
Forward Transfer Admittance (VDS = 3.0 Vdc, ID = 10 mAdc)
YFS
15
–
–
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 3.0 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
–
10.4
–
pF
Output Capacitance
(VDS = 3.0 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
8.4
–
Reverse Transfer Capacitance
(VDS = 3.0 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Crss
–
2.8
–
SWITCHING CHARACTERISTICS
Turn–On Delay Time
(VDD = 3.0 Vdc, ID = 10 mAdc,
(VDD 3.0 Vdc, ID 10 mAdc,
VGS = 0 to 2.5 Vdc)
ton
toff
–
0.15
–
μ
s
Turn–Off Delay Time
–
0.13
–
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