- 您现在的位置：买卖IC网 > PDF目录17493 > NTF3055L108T3LF (ON Semiconductor)MOSFET N-CH 60V 3A SOT223 PDF资料下载
参数资料
| 型号： | NTF3055L108T3LF |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 3A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 Product Discontinuation 03/Apr/2007 |
| 标准包装： | 4,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 1.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 440pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTF3055L108T3LFOS |
NTF3055L108,
NVF3055L108
Power MOSFET
3.0 A, 60 V, Logic Level, N ? Channel
SOT ? 223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? AEC Q101 Qualified ? NVF3055L108
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
http://onsemi.com
3.0 A, 60 V
R DS(on) = 120 m W
N ? Channel
D
G
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage
Symbol
V DSS
V DGR
Value
60
60
Unit
Vdc
Vdc
1
2
3
4
SOT ? 223
CASE 318E
STYLE 3
? Continuous
? Non ? repetitive (t p ≤ 10 ms)
V GS
± 15
± 20
Vdc
Vpk
MARKING DIAGRAM
Drain Current
Adc
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p ≤ 10 m s)
I D
I D
I DM
3.0
1.4
9.0
Apk
3055L = Device Code
A = Assembly Location
Y = Year
AYW
3055L G
G
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Derate above 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc,
I L(pk) = 7.0 Apk, L = 3.0 mH, V DS = 60 Vdc)
P D
T J , T stg
E AS
2.1
1.3
0.014
? 55
to 175
74
Watts
Watts
W/ ° C
° C
mJ
W = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
4 Drain
Thermal Resistance
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JA
R q JA
T L
72.3
114
260
° C/W
° C
1
Gate
2
Drain
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 ″ pad size, 1 oz.
(Cu. Area 0.0995 in 2 ).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2 ? 2.4 oz. (Cu. Area 0.272 in 2 ).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 6
1
Publication Order Number:
NTF3055L108/D
相关PDF资料 |
PDF描述 |
|---|---|
| NIF9N05CLT3 | MOSFET N-CH 52V 2.6A SOT223 |
| NTB30N06LT4 | MOSFET N-CH 60V 30A D2PAK |
| A7NXK-3710G | DSUB CABL-AMN37K/ AE37G / X |
| NTB4302T4 | MOSFET N-CH 30V 74A D2PAK |
| GBM10DSEI | CONN EDGECARD 20POS .156 EYELET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTF3055L108T3LFG | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTF3055L175 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2.0 A, 60 V, Logic Level |
| NTF3055L175T1 | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTF3055L175T1G | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTF3055L175T3 | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。