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| 型号： | NTGS4111PT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.6A 6-TSOP |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 15V |
| 功率 - 最大： | 630mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGS4111P
Power MOSFET
? 30 V, ? 4.7 A, Single P ? Channel, TSOP ? 6
Features
?
?
?
?
?
Leading ? 30 V Trench Process for Low R DS(on)
Low Profile Package Suitable for Portable Applications
Surface Mount TSOP ? 6 Package Saves Board Space
Improved Efficiency for Battery Applications
Pb ? Free Package is Available
V (BR)DSS
? 30 V
http://onsemi.com
R DS(on) TYP
38 m W @ ? 10 V
I D MAX
? 4.7 A
Applications
? Battery Management and Switching
? Load Switching
? Battery Protection
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
68 m W @ ? 4.5 V
P ? Channel
1 2 5 6
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 30
± 20
V
V
3
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
? 3.7
? 2.7
? 4.7
1.25
2.0
A
W
4
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
6
5
4
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Steady T A = 25 ° C
State
T A = 85 ° C
T A = 25 ° C
tp = 10 m s
I D
P D
I DM
? 2.6
? 1.9
0.63
? 15
A
W
A
1
TSOP ? 6
CASE 318G
STYLE 1
TG M G
G
1 2 3
Drain Drain Gate
Operating Junction and Storage Temperature
T J ,
T STG
? 55 to
150
° C
TG
M
= Specific Device Code
= Date Code*
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
THERMAL RESISTANCE RATINGS
Rating
Junction ? to ? Ambient – Steady State (Note 1)
I S
T L
Symbol
R q JA
? 1.7
260
Max
100
A
° C
Unit
° C/W
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Junction ? to ? Ambient – t ≤ 5 s (Note 1)
R q JA
62.5
Device
Package
Shipping ?
Junction ? to ? Ambient – Steady State (Note 2) R q JA 200
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface ? mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.006 in sq).
NTGS4111PT1 TSOP ? 6 3000 / Tape & Reel
NTGS4111PT1G TSOP ? 6 3000 / Tape& Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2009
July, 2009 ? Rev. 3
1
Publication Order Number:
NTGS4111P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS4111PT1G | 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS4111PT2G | 功能描述:MOSFET PFET 4.7A 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS4141N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 |
| NTGS4141NT1 | 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS4141NT1G | 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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