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| 型号： | NTHS5443T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CH 3.6A 20V CHIPFET |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 3.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 600mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 4.5V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTHS5443T1GOSCT |
NTHS5443
Power MOSFET
?20 V, ?4.9 A, P?Channel ChipFET t
Features
?
?
?
?
Low R DS(on) for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package Saves Board Space
Pb?Free Package is Available
V (BR)DSS
http://onsemi.com
R DS(on) TYP
I D MAX
Applications
? Power Management in Portable and Battery?Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
?20 V
G
56 m W @ ?4.5
S
?4.9 A
Steady
Rating
Symbol
5 secs
State
Unit
Drain?Source Voltage
Gate?Source Voltage
V DS
V GS
?20
" 12
V
V
D
P?Channel MOSFET
Continuous Drain Current
(T J = 150 ° C) (Note 1)
T A = 25 ° C
T A = 85 ° C
Pulsed Drain Current
Continuous Source Current (Note 1)
Maximum Power Dissipation (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
I DM
I S
P D
?4.9
?3.5
?4.9
2.5
1.3
" 15
?3.6
?2.6
?3.6
1.3
0.7
A
A
A
W
8
1
PIN
CONNECTIONS
ChipFET
CASE 1206A
STYLE 1
MARKING
DIAGRAM
Operating Junction and Storage
T J , T stg
?55 to +150
° C
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
D 8
D 7
D 6
S 5
1 D
2 D
3 D
4 G
1
2
3
4
8
7
6
5
[1 oz] including traces).
A4 = Specific Device Code
M = Month Code
G
= Pb?Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTHS5443T1
NTHS5443T1G
Package
ChipFET
ChipFET
(Pb?Free)
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
July, 2005 ? Rev. 6
1
Publication Order Number:
NTHS5443T1/D
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| NTHS5445T1 | 功能描述:MOSFET P-CH 8V 5.2A CHIPFET RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| NTI02B0N1TRF | 制造商:NIC Components Corp 功能描述:- Tape and Reel |
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