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| 型号： | NTJD1155LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 8V 1.3A SOT-363 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 8V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 175 毫欧 @ 1.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 功率 - 最大： | 400mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTJD1155LT1GOSDKR |
NTJD1155L
Power MOSFET
8 V, + 1.3 A, High Side Load Switch with
Level ? Shift, P ? Channel SC ? 88
The NTJD1155L integrates a P and N ? Channel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
http://onsemi.com
load currents are needed. The P ? Channel device is specifically
designed as a load switch using ON Semiconductor state ? of ? the ? art
trench technology. The N ? Channel, with an external resistor (R1),
functions as a level ? shift to drive the P ? Channel. The N ? Channel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
V (BR)DSS
8.0 V
R DS(on) TYP
130 m W @ ? 4.5 V
170 m W @ ? 2.5 V
260 m W @ ? 1.8 V
I D MAX
± 1.3 A
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
V IN and V ON/OFF.
SIMPLIFIED SCHEMATIC
Features
? Extremely Low R DS(on) P ? Channel Load Switch MOSFET
? Level Shift MOSFET is ESD Protected
? Low Profile, Small Footprint Package
? V IN Range 1.8 to 8.0 V
? ON/OFF Range 1.5 to 8.0 V
? These Devices are Pb ? Free and are RoHS Compliant
4
6
5
1
Q2
Q1
2,3
T A = 85 ° C
T A = 85 ° C
1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Input Voltage (V DSS , P ? Ch) V IN
ON/OFF Voltage (V GS , N ? Ch) V ON/OFF
Continuous Load Current Steady T A = 25 ° C I L
(Note 1) State
Power Dissipation Steady T A = 25 ° C P D
(Note 1) State
Pulsed Load Current t p = 10 m s I LM
Value
8.0
8.0
± 1.3
± 0.9
0.40
0.20
± 3.9
Unit
V
V
A
W
A
MARKING
SC ? 88 DIAGRAM
(SOT ? 363)
CASE 419B
STYLE 30 TB M G
G
TB = Device Code
M = Date Code 1
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Operating Junction and Storage Temperature
T J ,
T STG
? 55 to
150
° C
D1/G2
6
G1
5
S2
4
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
? 0.4
260
A
° C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1
S1
2 3
D2 D2
Junction ? to ? Ambient – Steady State (Note 1) R q JA 320 ° C/W
Junction ? to ? Foot – Steady State (Note 1) R q JF 220
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Device Package Shipping ?
NTJD1155LT1G SC ? 88 3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
November, 2012 ? Rev. 5
1
Publication Order Number:
NTJD1155L/D
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